欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: IRGP50B60PDPBF
廠商: International Rectifier
英文描述: WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述: WARP2系列IGBT與超快軟恢復二極管
文件頁數: 1/10頁
文件大小: 396K
代理商: IRGP50B60PDPBF
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
IRGP50B60PDPbF
1
www.irf.com
12/1/04
Features
NPT Technology, Positive Temperature Coefficient
Lower V
CE
(SAT)
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Higher Reliability
Benefits
Parallel Operation for Higher Current Applications
Lower Conduction Losses and Switching Losses
Higher Switching Frequency up to 150kHz
E
G
n-channel
C
V
CES
= 600V
V
CE(on)
typ. = 2.00V
@ V
GE
= 15V
I
C
= 33A
Equivalent MOSFET
Parameters
R
CE(on)
typ. = 61m
I
D
(FET equivalent) = 50A
Applications
Telecom and Server SMPS
PFC and ZVS SMPS Circuits
Uninterruptable Power Supplies
Consumer Electronics Power Supplies
Lead- Free
TO-247AC
G
C
E
SMPS IGBT
Absolute Maximum Ratings
Parameter
Max.
600
75
42
150
150
50
25
100
±20
370
150
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FRM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
Clamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
Maximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
A
V
W
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
6.0 (0.21)
Max.
0.34
0.64
–––
40
–––
Units
°C/W
R
θ
JC
(IGBT)
R
θ
JC
(Diode)
R
θ
CS
R
θ
JA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
g (oz)
相關PDF資料
PDF描述
IRGPC20F Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管)
IRGPC20M Insulated Gate Bipolar Transistors (IGBTs)(短路額定超快速絕緣柵型雙極型晶體管)
IRGPF20F Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管)
IRHF57230SE RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39)
IRHM7460SE TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=18.8A)
相關代理商/技術參數
參數描述
IRGP8B120UD 制造商:International Rectifier 功能描述:IGBT TRANSISTOR
IRGPC20F 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A)
IRGPC20K 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours
IRGPC20KD2 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours
IRGPC20M 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours
主站蜘蛛池模板: 建昌县| 遂昌县| 普兰店市| 永寿县| 平和县| 青浦区| 肇州县| 洞头县| 高邮市| 赞皇县| 梅州市| 南皮县| 如东县| 车险| 丰顺县| 秦安县| 武夷山市| 信阳市| 利辛县| 浮梁县| 紫阳县| 芦山县| 迭部县| 红桥区| 金门县| 全州县| 大渡口区| 平定县| 策勒县| 聂拉木县| 南开区| 楚雄市| 蒙山县| 太仆寺旗| 策勒县| 新余市| 鄂尔多斯市| 当雄县| 新乡市| 海林市| 赞皇县|