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參數(shù)資料
| 型號(hào)： | IRGPC20K |
| 文件頁數(shù)： | 9/9頁 |
| 文件大小： | 146K |
| 代理商： | IRGPC20K |
Vg GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Fig. 18e
- Macro Waveforms for Test Circuit of Fig. 18a
Fig. 19
- Clamped Inductive Load Test
Circuit
R
L
=
480V
4 X I
C
@25°C
0 - 480V
Fig. 20
- Pulsed Collector Current
Test Circuit
IRGPC30KD2
Dimensions in Millimeters and (Inches)
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
- D -
5.30 (.209)
4.70 (.185)
2.50 (.089)
1.50 (.059)
4
3.65 (.143)
3.55 (.140)
0.25 (.010)
3X
0.80 (.031)
0.40 (.016)
2.60 (.102)
2.20 (.087)
3.40 (.133)
3.00 (.118)
3X
0.25 (.010)
M
C
A
S
4.30 (.170)
3.70 (.145)
- C -
2X
5.50 (.217)
4.50 (.177)
5.50 (.217)
1.40 (.056)
1.00 (.039)
D
M
M
B
- A -
15.90 (.626)
15.30 (.602)
- B -
1
2
3
20.30 (.800)
19.70 (.775)
14.80 (.583)
14.20 (.559)
2.40 (.094)
2.00 (.079)
2X
5.45 (.215)
2X
*
NOTES:
1 DIMENSIONS & TOLERANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 DIMENSIONS ARE SHOWN
MILLIMETERS (INCHES).
4 CONFORMS TO JEDEC OUTLINE
TO-247AC.
LEAD ASSIGNMENTS
2 - COLLECTOR
3 - EMITTER
*
LONGER LEADED (20mm)
VERSION AVAILABLE (TO-247AD)
TO ORDER ADD "-E" SUFFIX
TO PART NUMBER
D.U.T.
V *
50V
L
1000V
6000μF
100V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRGPC20KD2 | |
| IRGPC30K | |
| IRGPC30KD2 | Insulated Gate Bipolar Transistors (IGBTs) with Ultrafast Soft Recovery Diode(帶超快軟恢復(fù)二極管的絕緣柵雙極型晶體管) |
| IRGPF50 | |
| IRGPF50F | Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGPC20KD2 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGPC20M | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGPC20MD2 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=8.0A) |
| IRGPC20U | 制造商:Int'L Rectifier 功能描述:Trans IGBT Chip N-CH 600V 13A 3-Pin(3+Tab) TO-247AC |
| IRGPC30F | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR |
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