- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄360957 > IRHE9230 TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 4A I(D) | LLCC PDF資料下載
參數(shù)資料
| 型號： | IRHE9230 |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 4A I(D) | LLCC |
| 中文描述： | 晶體管| MOSFET的| P通道| 200伏五（巴西）直| 4A條（丁）| LLCC |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 149K |
| 代理商： | IRHE9230 |
www.irf.com
3
Radiation Characteristics
IRHE9230
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage -200 — -200 — V V
GS
= 0V, I
D
= -1.0mA
V
GS(th)
Gate Threshold Voltage
- 2.0 - 4.0 -2.0 -5.0
I
GSS
Gate-to-Source Leakage Forward
— -100 — -100 nA
I
GSS
Gate-to-Source Leakage Reverse
— 100 — 100
I
DSS
Zero Gate Voltage Drain Current
— -25 — -25 μA V
DS
=-160V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— —
V
GS
= -12V, I
D
=-2.4A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.80 — 0.80
V
GS
= -12V, I
D
=-2.4A
On-State Resistance (LCC-18)
V
SD
Diode Forward Voltage
— -5.0 — -5.0 V V
GS
= 0V, IS = -4.0A
100K Rads(Si)
1
300K Rads (Si)
2
Units
Test Conditions
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part number IRHE9230 (JANSR2N7390U)
2. Part number IRHE93230 (JANSF2N7390U)
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@
V
GS
=0V @
V
GS
=-5V @
V
GS
=-10V @
V
GS
=-15V @
V
GS
=-20V
Cu
28
285 43 -200 -200 -200 -200 —
Br
36.8
305 39 -200 -200 -160 -75 —
LET
Energy Range
V
DS(V)
-250
-200
-150
-100
-50
0
0
5
10
15
20
VGS
V
Cu
Br
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHE93230 | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 4A I(D) | LLCC |
| IRHF53Z30 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | TO-39 |
| IRHF54034 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-39 |
| IRHF54Z30 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | TO-39 |
| IRHF57034 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-39 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHE93110 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:POWER MOSFET 100V - P CHANNEL SURFACE MOUNT (LCC-18) |
| IRHE93130 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHE93230 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHF130 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-205AF |
| IRHF230 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-205AF |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。