- 您現在的位置：買賣IC網 > PDF目錄384502 > IRHF4130 (International Rectifier) 30V N-Channel PowerTrench MOSFET PDF資料下載
參數資料
| 型號： | IRHF4130 |
| 廠商： | International Rectifier |
| 元件分類： | 功率晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 283K |
| 代理商： | IRHF4130 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
8.0
5.0
32
25
0.20
±20
130
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
8.0
2.5
5.5
-55 to 150
300 ( 0.063 in.(1.6mm) from case for 10s)
0.98 (Typical )
g
Pre-Irradiation
International Rectifier’s RADHard HEXFET
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
technol-
o
C
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
08/08/03
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
I
D
QPL Part Number
IRHF7130 100K Rads (Si)
0.18
IRHF3130 300K Rads (Si)
0.18
IRHF4130 600K Rads (Si)
0.18
IRHF8130 1000K Rads (Si) 0.18
8.0A
8.0A
8.0A
8.0A
JANSR2N7261
JANSF2N7261
JANSG2N7261
JANSH2N7261
For footnotes refer to the last page
IRHF7130
JANSR2N7261
100V, N-CHANNEL
REF: MIL-PRF-19500/601
RAD Hard
HEXFET
TECHNOLOGY
TO-39
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
PD - 90653E
相關PDF資料 |
PDF描述 |
|---|---|
| IRHF8130 | 30V N-Channel PowerTrench MOSFET |
| IRHF53130 | 30V N-Channel PowerTrench MOSFET |
| IRHF57130 | 30V N-Channel PowerTrench MOSFET |
| IRHF54130 | 30V N-Channel PowerTrench MOSFET |
| IRHF58130 | 30V N-Channel PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRHF4230 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHF53034 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHF53034SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF53130 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHF53130SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
發布緊急采購，3分鐘左右您將得到回復。