- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄360957 > IRHF53034 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-39 PDF資料下載
參數(shù)資料
| 型號： | IRHF53034 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-39 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 12A條（丁）| TO - 39封裝 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 129K |
| 代理商： | IRHF53034 |
IRHF57Z30
Pre-Irradiation
2
www.irf.com
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJA
Junction-to-Ambient
Min Typ Max
—
—
—
—
Units
Test Conditions
5.0
175
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
12*
48
1.5
92
194
Test Conditions
—
—
—
—
—
V
ns
nC
T
j
= 25°C, IS = 12A, VGS = 0V
Tj = 25°C, IF = 12A, di/dt
≤
100A/
μ
s
VDD
≤
25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
* Current is limited by internal wire diameter
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
30
—
Typ
—
0.03
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
0.045
VGS = 12V, ID = 10A
2.0
12
—
—
—
—
—
—
4.0
—
10
25
V
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 10A
VDS= 24V ,VGS=0V
VDS = 24V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 12A
VDS = 15V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
65
20
10
25
100
35
30
— nH
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
nC
VDD = 15V, ID = 12A
VGS =12V, RG = 7.5
bonded from Source Pin to Drain Pad
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
—
—
—
2055
936
35
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
ns
μ
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHF7310 | |
| IRHF7330SE | 400V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package |
| IRHF7430SE | 500V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package |
| IRHF7310SE | N-Channel Single Event Effect (SEE) Rad Hard HEXFET Transistor(N 溝道 單事件效應 Rad Hard HEXFET技術(shù)晶體管) |
| IRHF9230 | -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHF53034SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF53130 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHF53130SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF53214SE | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF53230 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION GARDENED POWER MOSFET THRU-HOLE (TO-39) |
發(fā)布緊急采購，3分鐘左右您將得到回復。