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參數資料
| 型號： | IRHF53230 |
| 廠商： | International Rectifier |
| 英文描述： | 200V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場效應管) |
| 中文描述： | 為200V，N溝道通孔抗輻射功率MOSFET（200V的電壓，通孔安裝抗輻射功率?溝道馬鞍山場效應管） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 129K |
| 代理商： | IRHF53230 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
7.3
4.5
29
25
0.2
±20
110
7.3
2.5
7.0
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
o
C
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
IRHF57230
200V, N-CHANNEL
TECHNOLOGY
R
5
12/01/99
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
IRHF57230
100K Rads (Si) 0.22
IRHF53230
300K Rads (Si) 0.22
IRHF54230
600K Rads (Si) 0.22
IRHF58230
1000K Rads (Si) 0.275
I
D
7.3A
7.3A
7.3A
7.3A
Features:
n
Single Event Effect (SEE) Hardened
n
Ultra Low R
DS(on)
n
Neutron Tolerant
n
Identical Pre- and Post-Electrical Test Conditions
n
Repetitive Avalanche Ratings
n
Dynamic dv/dt Ratings
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
For footnotes refer to the last page
TO-39
PD
-
93788
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PDF描述 |
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| IRHF58230 | 200V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場效應管) |
| IRHF54Z30 | 30V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(30V,通孔安裝抗輻射功率N溝道MOS場效應管) |
| IRHF53Z30 | 30V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(30V,通孔安裝抗輻射功率N溝道MOS場效應管) |
| IRHF57Z30 | 30V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(30V,通孔安裝抗輻射功率N溝道MOS場效應管) |
| IRHF58Z30 | 30V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(30V,通孔安裝抗輻射功率N溝道MOS場效應管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRHF53230SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHF53234SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHF53234SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF53234SESCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF53Z30 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
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