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參數資料
| 型號： | IRHF58034 |
| 英文描述： | 60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package |
| 中文描述： | 60V的1000kRad高可靠性單N溝道MOSFET的工貿硬化在TO - 205AF包 |
| 文件頁數： | 5/8頁 |
| 文件大小： | 129K |
| 代理商： | IRHF58034 |
www.irf.com
5
Pre-Irradiation
IRHF57Z30
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
500
1000
1500
2000
2500
3000
3500
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
rss
C
oss
C
iss
0
10
20
30
40
50
60
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
12A
V
= 15V
DS
V
= 24V
DS
0.1
1
10
100
0.4
0.8
1.2
1.6
2.0
2.4
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
T = 150 C
°
1
10
100
VDS , Drain-toSource Voltage (V)
1
10
100
ID
Tc = 25
°
C
Tj = 150
°
C
Single Pulse
1ms
1
0ms
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100μs
相關PDF資料 |
PDF描述 |
|---|---|
| IRHF58Z30 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | TO-39 |
| IRHF593110 | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 2.6A I(D) | TO-205AF |
| IRHF593230 | -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package |
| IRHF597110 | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 2.6A I(D) | TO-205AF |
| IRHF597230 | -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRHF58034CM | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
| IRHF58130 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHF58230 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF58Z30 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHF58Z30CM | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
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