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參數(shù)資料
| 型號： | IRHF7310SE |
| 廠商： | International Rectifier |
| 英文描述： | N-Channel Single Event Effect (SEE) Rad Hard HEXFET Transistor(N 溝道 單事件效應(yīng) Rad Hard HEXFET技術(shù)晶體管) |
| 中文描述： | N通道單粒子效應(yīng)（見）拉德硬的HEXFET晶體管（不適用溝道單事件效應(yīng)拉德硬盤的HEXFET技術(shù)晶體管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 36K |
| 代理商： | IRHF7310SE |
Thermal Resistance
Parameter
Junction-to-Case
Min. Typ. Max. Units
—
—
Test Conditions
RthJC
8.3
K/W
RthJA
Junction-to-Ambient
—
—
175
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min. Typ. Max. Units
—
—
—
—
Test Conditions
1.15
4.6
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.4
540
4.5
V
ns
μ
C
T
j
= 25°C, IS = 1.15A, VGS = 0V
Tj = 25°C, IF = 1.15A, di/dt
≤
100A/
μ
s
VDD
≤
50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min.
400
—
Typ. Max. Units
—
—
0.37
—
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
2.5
0.2
—
—
—
—
—
—
—
—
4.5
5.2
4.5
—
50
250
VGS = 12V, ID = 0.7A
VGS = 12V, ID = 1.15A
VDS = VGS, ID = 1.0 mA
VDS > 15V, IDS = 0.7A
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 1.15A
VDS = Max. Rating x 0.5
V
VGS(th)
gfs
IDSS
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.0
100
-100
10
3
6
15
20
35
30
—
VDD = 200V, ID = 1.15A,
RG = 7.5
LS
Internal Source Inductance
—
15
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
215
65
—
—
—
—
VGS = 0V, VDS = 25V
f = 1.0 MHz
IRHF7310SE Device
Pre-Radiation
μ
A
nC
pF
nH
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
Modified MOSFET
symbol showing the
internal inductances.
nA
A
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