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參數資料
| 型號： | IRHF7330SE |
| 英文描述： | 400V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package |
| 中文描述： | 400V 100kRad高可靠性單N溝道MOSFET的看硬化在TO - 205AF包 |
| 文件頁數： | 4/4頁 |
| 文件大小： | 36K |
| 代理商： | IRHF7330SE |
IRHF7310SE Device
Radiation Characteristics
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
@ VDD = 50V, Starting TJ = 25°C,
EAS = [0.5 * L * (I
Peak IL = 1.15A, VGS = 12V, 25
≤
RG
≤
200
ISD
≤
1.15A, di/dt
≤
40 A/
μ
s,
VDD
≤
BVDSS, TJ
≤
150°C
Suggested RG = 2.35
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
K/W = °C/W
W/K = W/°C
2
) * [BVDSS/(BVDSS-VDD)]
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019.
Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-radiation)
applied and VGS = 0 during irradiation per
MlL-STD-750, method 1019.
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
Process characterized by independent laboratory.
All Pre-Radiation and Post-Radiation test
conditions are
identical
to facilitate direct
comparison for circuit applications.
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST:
K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
6/96
Case Outline and Dimensions — TO-204AF (TO-39)
Case Style Conforms to JEDEC Outline TO-205AF (TO-39)
All Dimensions in Millimeters and (Inches)
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