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參數資料
| 型號： | IRHG93110 |
| 廠商： | International Rectifier |
| 英文描述： | Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安裝抗輻射功率MOSFET) |
| 中文描述： | 通孔抗輻射功率MOSFET（100V的，通孔安裝抗輻射功率MOSFET的） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 103K |
| 代理商： | IRHG93110 |
Pre-Irradiation
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (MO-036AB)
3/8/00
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
IRHG9110 100K Rads (Si)
IRHG93110 300K Rads (Si)
I
D
1.1
1.1
-0.75A
-0.75A
Features:
n
Single Event Effect (SEE) Hardened
n
Low R
DS(on)
n
Low Total Gate Charge
n
Proton Tolerant
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Ceramic Package
n
Light Weight
For footnotes refer to the last page
MO-036AB
IRHG9110
100V, 4P-CHANNEL
RAD-Hard
MOSFET TECHNOLOGY
HEXFET
International Rectifier’s RAD-Hard
TM
HEXFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
MOSFET
PD - 93819
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy 75
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
-0.75
-0.5
-3.0
1.4
0.011
±20
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-0.75
0.14
2.4
-55 to 150
300 (0.63in./1.6mm from case for 10s)
1.3 (Typical)
g
o
C
A
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