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參數資料
型號: IRHLUB7970Z4
廠商: International Rectifier
英文描述: RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB)
中文描述: 抗輻射功率MOSFET的邏輯電平表面貼裝(布法羅)
文件頁數: 1/8頁
文件大小: 180K
代理商: IRHLUB7970Z4
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Units
ID @ VGS = -4.5V, TC = 25°C
ID @ VGS = -4.5V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
-0.53
-0.33
-2.12
0.6
0.0045
±10
3.5
-0.53
0.06
-4.4
-55 to 150
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300 (for 5s)
43 (Typical )
mg
Pre-Irradiation
o
C
A
RADIATION HARDENED IRHLUB7970Z4
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (UB)
www.irf.com
1
60V, P-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level R
DS(on)
IRHLUB7970Z4 100K Rads (Si) 1.2
-0.53A
IRHLUB7930Z4 300K Rads (Si) 1.2
-0.53A
I
D
For footnotes refer to the last page
UB
International Rectifier’s R7
TM
Logic Level Power
Mosfets provide simple solution to interfacing CMOS
and TTL control circuits to power devices in space
and other radiation environments. The threshold
voltage remains within acceptable operating limits
over the full operating temperature and post radiation.
This is achieved while maintaining single event gate
rupture and single event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
PD - 94764C
Features:
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Complimentary N-Channel Available -
IRHLUB770Z4
Available on Tape & Reel
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