- 您現在的位置：買賣IC網 > PDF目錄377521 > IRHM57Z60 (International Rectifier) 30V, N-Channel Thru-hole Radiation Hardened Power MOSFET(30V,通孔安裝抗輻射功率N溝道MOSFET) PDF資料下載
參數資料
| 型號： | IRHM57Z60 |
| 廠商： | International Rectifier |
| 英文描述： | 30V, N-Channel Thru-hole Radiation Hardened Power MOSFET(30V,通孔安裝抗輻射功率N溝道MOSFET) |
| 中文描述： | 30V的N通道通孔抗輻射功率MOSFET（30V的，通孔安裝抗輻射功率?溝道MOSFET的） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 106K |
| 代理商： | IRHM57Z60 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature 300 (0.063 in./1.6 mm from case for 10s)
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
35*
35*
140
250
2.0
±20
500
35
25
1.1
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
9.3 (Typical)
g
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low
RDS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
o
C
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM57Z60
30V, N-CHANNEL
TECHNOLOGY
R
5
4/10/00
www.irf.com
1
* Current is limited by internal wire diameter
For footnotes refer to the last page
Product Summary
Part Number Radiation Level R
DS(on)
IRHM57Z60 100K Rads (Si) 0.0095
35A*
IRHM53Z60 300K Rads (Si) 0.0095
35A*
IRHM54Z60 600K Rads (Si) 0.0095
35A*
IRHM58Z60 1000K Rads (Si) 0.010
I
D
35A*
Features:
n
Single Event Effect (SEE) Hardened
n
Neutron Tolerant
n
Identical Pre- and Post-Electrical Test Conditions
n
Repetitive Avalanche Ratings
n
Dynamic dv/dt Ratings
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermatically Sealed
n
Electically Isolated
n
Ceramic Eyelets
n
Light Weight
TO-254AA
Pre-Irradiation
PD - 93786A
相關PDF資料 |
PDF描述 |
|---|---|
| IRHM58Z60 | 30V, N-Channel Thru-hole Radiation Hardened Power MOSFET(30V,通孔安裝抗輻射功率N溝道MOSFET) |
| IRHM57264SE | Thru-Hole Radiation Hardened Power MOSFET(通孔安裝抗輻射功率MOSFET) |
| IRHM7054 | HEXFET Transistor(HEXFET 晶體管) |
| IRHM8054 | HEXFET Transistor(HEXFET 晶體管) |
| IRHM7160 | HEXFET Transistor(HEXFET 晶體管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRHM57Z60SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM57Z60SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM58064 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHM58064SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM58064SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
發布緊急采購，3分鐘左右您將得到回復。