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參數(shù)資料
| 型號： | IRHM9130U |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 11A I(D) | TO-254VAR |
| 中文描述： | 晶體管| MOSFET的| P通道| 100V的五（巴西）直| 11A條（丁）|對254VAR |
| 文件頁數(shù)： | 8/8頁 |
| 文件大小： | 140K |
| 代理商： | IRHM9130U |
IRHM9130, IRHM93130 Device
Pre-Irradiation
8
www.irf.com
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
@ VDD = -25V, Starting TJ = 25°C,
EAS = [0.5 * L * (IL
Peak IL = -11A, VGS = -12V, 25
≤
RG
≤
ISD
≤
-11A, di/dt
≤
-480A/
μ
s,
VDD
≤
BVDSS, TJ
≤
150°C
Suggested RG = 7.5
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
2
) ]
Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-Irradiation)
applied and VGS = 0 during irradiation per
MlL-STD-750, method 1019, condition A.
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
All Pre-Irradiation and Post-Irradiation test
conditions are
identical
to facilitate direct
comparison for circuit applications.
Case Outline and Dimensions — TO-254AA
3.78 ( .149 )
3.53 ( .139 )
-A-
13.84 ( .545 )
13.59 ( .535 )
6.60 ( .260 )
6.32 ( .249 )
20.32 ( .800 )
20.07 ( .790 )
13.84 ( .545 )
13.59 ( .535 )
-C-
1.14 ( .045 )
0.89 ( .035 )
3.81 ( .150 )
1.27 ( .050 )
1.02 ( .040 )
-B-
.12 ( .005 )
3X
2X
3.81 ( .150 )
1 2 3
17.40 ( .685 )
16.89 ( .665 )
31.40 ( 1.235 )
NOTES:
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS ( INCHES ).
Conforms to JEDEC Outline TO-254AA
Dimensions in Millimeters and ( Inches )
.50 ( .020 ) M C A M B
.25 ( .010 ) M C
LEGEND
1 - COLLECTOR
2 - EMITTER
3 - GATE
W
LEGEND
1- DRAIN
2- SOURCE
3- GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted,
machined, or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium
oxide packages shall not be placed in acids that will produce
fumes containing beryllium.
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 1/99
1 2 3
LEGEND
1- DRAIN
2- SOURCE
3- GATE
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| IRHM9150 | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 22A 3PIN TO-254AA - Rail/Tube |
| IRHM9150D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 21A I(D) | TO-254VAR |
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| IRHM9150U | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 21A I(D) | TO-254VAR |
| IRHM9160 | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 35A 3PIN TO-254AA - Rail/Tube |
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