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參數資料
| 型號： | IRHM9150U |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 21A I(D) | TO-254VAR |
| 中文描述： | 晶體管| MOSFET的| P通道| 100V的五（巴西）直| 21A條（丁）|對254VAR |
| 文件頁數： | 3/8頁 |
| 文件大小： | 140K |
| 代理商： | IRHM9150U |
IRHM9130, IRHM93130 Device
www.irf.com
3
Table 1. Low Dose Rate
Parameter
IRHM9130 IRHM93130
100K Rads (Si) 300K Rads (Si)
Units
Min
Max
Min
-100
—
-100
-2.0
-4.0
-2.0
—-
-100
—
—
100
—
—
-25
—
—
0.3
—
Test Conditions
Max
—
-5.0
-100
100
-25
0.3
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20V
V
DS
=0.8 x Max Rating, V
GS
=0V
V
GS
= -12V, I
D
= -7A
nA
μA
V
SD
—
-3.0
—
-3.0
V
TC = 25°C, IS = -11A,V
GS
= 0V
Radiation Performance of Rad Hard HEXFETs
Radiation Characteristics
are tested and specified using the same drive circuitry
and test conditions in order to provide a direct com-
parison. It should be noted that at a radiation level of
3 x 10
5
Rads (Si) the only parametric limit change is
V
GS(th)
maximum.
High dose rate testing may be done on a special re-
quest basis using a dose rate up to 1 x 10
12
Rads
(Si)/Sec (See Table 2). International Rectifier radia-
tion hardened P-Channel HEXFETs are considered
to be neutron-tolerant, as stated in MIL-PRF-19500
Group D.
International Rectifier radiation hardened P-Channel
HEXFETs have been characterized in heavy ion
Single Event Effects (SEE) environments. Single
Event Effects characterization is shown in Table 3.
International Rectifier Radiation Hardened HEXFETs are
tested to verify their hardness capability. The hardness
assurance program at International Rectifier com prises
three radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MIL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate condition of -12 volts per note
5 and a V
bias condition equal to 80% of the device
rated voltage per note 6. Pre- and post- irradiation lim-
its of the devices irradiated to 1 x 10
5
Rads (Si) are
identical and are presented in Table1,column1,
IRHM9130. Post-irradiation limits of the devices irra-
diated to 3 x 10
5
Rads (Si) are presented in Table 1,
column 2, IRHM93130. The values in Table 1 will be
met for either of the two low dose rate test circuits that
are used. Both pre- and post-irradiation performance
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min Typ Max
—
—
-80
Parameter
Drain-to-Source Voltage
Min Typ Max
Units
—
—
Test Conditions
V
DSS
-80
V
Applied drain-to-source voltage during
gamma-dot
Peak radiation induced photo-current
-160 A/μsec Rate of rise of photo-current
—
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
0.1
-60
—
—
—
-800
—
—
—
0.5
-60
—
—
—
A
LET (Si)
Fluence Range V
DS
Bias V
GS
Bias
Ion
(MeV/mg/cm
2
) (ions/cm
2
) (μm) (V) (V)
Ni 28
1x 10
5
~41 -100
5
Table 3. Single Event Effects
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