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參數資料
| 型號： | IRHMS57264SE |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 250V, N-CHANNEL |
| 中文描述： | 抗輻射功率MOSFET的通孔（低阻值到254AA）250V，N溝道 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 183K |
| 代理商： | IRHMS57264SE |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
37
23.5
148
208
1.67
±20
258
37
20.8
14
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature 300 (0.063 in.(1.6 mm from case for 10s))
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
9.3 ( Typical)
g
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low
RDS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
o
C
A
www.irf.com
1
TO-254AA
Pre-Irradiation
Low-Ohmic
Features:
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
RADIATION HARDENED JANSR2N7477T1
POWER MOSFET 250V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA)
REF: MIL-PRF-19500/685
IRHMS57264SE
Product Summary
Part Number Radiation Level R
DS(on)
I
D
QPL Part Number
IRHMS57264SE 100K Rads (Si) 0.061
37A JANSR2N7477T1
TECHNOLOGY
PD-95871
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|---|---|
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