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參數資料
| 型號： | IRHN4150 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統（SMD - 1） |
| 文件頁數： | 1/12頁 |
| 文件大小： | 284K |
| 代理商： | IRHN4150 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
PCKG. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
34
21
136
150
1.2
±20
500
34
15
5.5
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( for 5s)
2.6 (Typical )
g
Pre-Irradiation
International Rectifier’s RADHard HEXFET
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
technol-
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-1)
JANSR2N7268U
100V, N-CHANNEL
REF: MIL-PRF-19500/603
02/01/01
www.irf.com
1
RAD Hard
HEXFET
TECHNOLOGY
Product Summary
Part Number Radiation Level R
DS(on)
IRHN7150 100K Rads (Si)
IRHN3150 300K Rads (Si)
IRHN4150 600K Rads (Si)
IRHN8150 1000K Rads (Si) 0.065
I
D
QPL Part Number
JANSR2N7268U
JANSF2N7268U
JANSG2N7268U
JANSH2N7268U
0.065
0.065
0.065
34A
34A
34A
34A
For footnotes refer to the last page
IRHN7150
SMD-1
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
PD - 90720C
相關PDF資料 |
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| IRHN7150 | Female Disconnect Solderless Terminal; Wire Size (AWG):12-10; Tab Width:0.250"; Insulator Color:Yellow; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No |
| IRHN7450 | HEXFET TRANSISTOR |
| IRHN8450 | HEXFET Transistor(HEXFET 晶體管) |
| IRHN8150 | TRANSISTOR N-CHANNEL |
| IRHNA7160 | TRANSISTOR N-CHANNEL |
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