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參數(shù)資料
| 型號： | IRHN7250 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶體管) |
| 中文描述： | 的HEXFET晶體管（之HEXFET晶體管） |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 274K |
| 代理商： | IRHN7250 |
Product Summary
Part Number
IRHN7250
IRHN8250
BV
DSS
200V
200V
R
DS(on)
0.100
0.100
I
D
26A
26A
Features:
n
Radiation Hardened up to 1 x 10
6
Rads (Si)
n
Single Event Burnout (SEB) Hardened
n
Single Event Gate Rupture (SEGR) Hardened
n
Gamma Dot (Flash X-Ray) Hardened
n
Neutron Tolerant
n
Identical Pre- and Post-Electrical Test Conditions
n
Repetitive Avalanche Rating
n
Dynamic dv/dt Rating
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Electrically Isolated
n
Ceramic Eyelets
n
Surface Mount
n
Light Weight
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
26
16
104
150
1.2
±20
500
26
15
5.0
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (for 5 s)
2.6 (typical)
g
PD - 90679E
IRHN7250
IRHN8250
Pre-Irradiation
200Volt, 0.100
, MEGA RAD Hard
TM
HEXFET
International Rectifier’s RAD Hard technology
HEXFETs demonstrate excellent threshold voltage
stability and breakdown voltage stability at total
radiaition doses as high as 1x10
6
Rads(Si). Under
identical
pre- and post-irradiation test conditions, In-
ternational Rectifier’s RAD Hard HEXFETs retain
iden-
tical
electrical specifications up to 1 x 10
5
Rads (Si)
total dose. No compensation in gate drive circuitry is
required. These devices are also capable of surviving
transient ionization pulses as high as 1 x 10
12
Rads
(Si)/Sec, and return to normal operation within a few
microseconds. Since the RAD Hard process utilizes
International Rectifier’s patented HEXFET technology,
the user can expect the highest quality and reliability
in the industry.
RAD Hard HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as
voltage control, very fast switching, ease of parallel-
ing and temperature stability of the electrical param-
eters. They are well-suited for applications such as
switching power supplies, motor controls, inverters,
choppers, audio amplifiers and high-energy pulse
circuits in space and weapons environments.
o
C
A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
www.irf.com
1
2/14/00
N CHANNEL
MEGA RAD Hard
TM
JANSR2N7269U
JANSH2N7269U
(REF:MIL-PRF-19500/603)
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| IRHN8250 | HEXFET Transistor(HEXFET 晶體管) |
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| IRHN9230 | P-Channel RAD HARD HEXFET TRANSISTOR(P 溝道 Rad Hard 技術(shù) HEXFET晶體管) |
| IRHN9250 | HEXFET Transistor(HEXFET 晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHN7250SE | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHN7250SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHN7450 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHN7450SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHN7450SE | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
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