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參數(shù)資料
型號(hào): IRHN7250SE
英文描述: 200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-1 package
中文描述: 200伏100kRad高可靠性單N通道看到一貼片MOSFET的硬化- 1封裝
文件頁(yè)數(shù): 1/8頁(yè)
文件大小: 126K
代理商: IRHN7250SE
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
26
16
104
150
1.2
±20
500
26
15
5.9
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (for 5 sec.)
2.6 (Typical)
g
Pre-Irradiation
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-1)
5/16/01
www.irf.com
1
SMD-1
Product Summary
Part Number Radiation Level R
DS(on)
IRHN7250SE 100K Rads (Si)
I
D
0.10
26A
Features:
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
For footnotes refer to the last page
IRHN7250SE
200V, N-CHANNEL
TECHNOLOGY
RAD Hard
HEXFET
International Rectifier’s RADHard
TM
HEXFET
MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low R
DS(on)
and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
PD - 91780B
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