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參數(shù)資料
型號: IRHNA3064
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | SMT
中文描述: 晶體管| MOSFET的| N溝道| 60V的五(巴西)直| 75A條(丁)|貼片
文件頁數(shù): 1/8頁
文件大?。?/td> 119K
代理商: IRHNA3064
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
75*
56
300
300
2.4
±20
500
75*
30
2.5
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( for 5 sec.)
3.5 (Typical )
g
Pre-Irradiation
International Rectifier’s RADHard HEXFET
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
technol-
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT(SMD-3)
12/12/01
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRHNA7064 100K Rads (Si) 0.015
75*A
IRHNA3064 300K Rads (Si) 0.015
75*A
IRHNA4064 600K Rads (Si) 0.015
75*A
IRHNA8064 1000K Rads (Si) 0.015
75*A
For footnotes refer to the last page
*Current is limited by pin diameter
IRHNB7064
60V, N-CHANNEL
HEXFET
RAD Hard
TECHNOLOGY
SMD-3
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
PD - 91737A
相關PDF資料
PDF描述
IRHNA3160 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 51A I(D) | SMT
IRHNA3260 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) | SMT
IRHNB3260 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) | SMT
IRHNB3Z60 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT
IRHNB4260 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) | SMT
相關代理商/技術參數(shù)
參數(shù)描述
IRHNA3160 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk
IRHNA3260 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk
IRHNA3Z60 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk
IRHNA3Z60SCS 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk
IRHNA3Z60SCV 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk
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