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參數(shù)資料
| 型號： | IRHNA57264SE |
| 英文描述： | 250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package |
| 中文描述： | 250V 100kRad高可靠性單N通道看到一貼片MOSFET的硬化- 2包 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大小： | 119K |
| 代理商： | IRHNA57264SE |
8
www.irf.com
IRHNB7064
Pre-Irradiation
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25
°
C, L=0.17mH
Peak IL = 75A, VGS =12V
ISD
≤
75A, di/dt
≤
220A/
μ
s,
VDD
≤
60V, TJ
≤
150
°
C
Foot Notes:
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 12/01
Case Outline and Dimensions
—
SMD-3
PAD ASSIGNMENTS
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| IRHNA5760SE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 55A I(D) | SMT |
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