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參數資料
型號: IRHNA57Z60
廠商: International Rectifier
英文描述: 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET)
中文描述: 30V的N通道表面安裝抗輻射功率MOSFET(30V的,表貼型抗輻射功率?溝道MOSFET的)
文件頁數: 1/8頁
文件大小: 105K
代理商: IRHNA57Z60
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
75*
75*
300
300
2.4
±20
500
75
30
0.83
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (for 5s)
3.3 (Typical)
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low
RDS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
IRHNA57Z60
30V, N-CHANNEL
TECHNOLOGY
R
5
4/10/00
www.irf.com
1
* Current is limited by internal wire diameter
For footnotes refer to the last page
SMD-2
Product Summary
Part Number Radiation Level R
DS(on)
IRHNA57Z60 100K Rads (Si) 0.0035
75*A
IRHNA53Z60 300K Rads (Si) 0.0035
75*A
IRHNA54Z60 600K Rads (Si) 0.0035
75*A
IRHNA58Z60 1000K Rads (Si) 0.0040
75*A
I
D
Features:
n
Single Event Effect (SEE) Hardened
n
Ultra Low R
DS(on)
n
Low Total Gate Charge
n
Proton Tolerant
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Surface Mount
n
Ceramic Package
n
Light Weight
PD - 91787E
相關PDF資料
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IRHNA58Z60 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET)
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相關代理商/技術參數
參數描述
IRHNA57Z60SCS 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk
IRHNA58064 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk
IRHNA58160 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk
IRHNA58260 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk
IRHNA58Z60 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk
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