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參數(shù)資料
| 型號： | IRHNA9064 |
| 廠商： | International Rectifier |
| 英文描述： | TRANSISTOR P-CHANNEL(BVdss=-60V, Rds(on)=0.055ohm, Id=-48A) |
| 中文描述： | 晶體管P溝道（BVdss \u003d- 60V的，的Rds（on）\u003d 0.055ohm，身份證\u003d- 48A條） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 123K |
| 代理商： | IRHNA9064 |
Product Summary
Part Number
IRHNA9064
BV
DSS
-60V
R
DS(on)
0.055
I
D
-48A
Features:
n
Radiation Hardened up to 1 x 10
5
Rads (Si)
n
Single Event Burnout (SEB) Hardened
n
Single Event Gate Rupture (SEGR) Hardened
n
Gamma Dot (Flash X-Ray) Hardened
n
Neutron Tolerant
n
Identical Pre- and Post-Electrical Test Conditions
n
Repetitive Avalanche Rating
n
Dynamic dv/dt Rating
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Surface Mount
n
Light-Weight
P-CHANNEL
RAD HARD
Provisional Data Sheet No. PD-9.1447
-60Volt,
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 10
5
Rads (Si). Under
identical
pre- and post-radia-
tion test conditions, International Rectifier’s P-Channel RAD
HARD HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in gate drive
circuitry is required. These devices are also capable of sur-
viving transient ionization pulses as high as 1 x 10
12
Rads
(Si)/Sec, and return to normal operation within a few micro-
seconds. Single Event Effect (SEE) testing of International
Rectifier P-Channel RAD HARD HEXFETs has demon-
strated virtual immunity to SEE failure. Since the P-Chan-
nel RAD HARD process utilizes International Rectifier’s
patented HEXFET technology, the user can expect the high-
est quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature
all of the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paralleling
and temperature stability of the electrical parameters. They
are well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifi-
ers and high-energy pulse circuits in space and weapons
environments.
Absolute Maximum Ratings
0.055
, RAD HARD HEXFET
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
IRHNA9064
Parameter
Continuous Drain Current
IRHNA9064
-48
-30
-192
300
2.4
± 20
500
-48
30
-5.5
-55 to 150
Units
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300 (For 5 sec)
3.3 (typical)
g
Pre-Radiation
o
C
A
Next Data Sheet
Index
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