- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384504 > IRHNJ54130 (International Rectifier) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) PDF資料下載
參數(shù)資料
| 型號： | IRHNJ54130 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統(tǒng)（SMD - 0.5） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 130K |
| 代理商： | IRHNJ54130 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
22*
16
88
75
0.6
±20
70
22
7.5
1.4
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( for 5s )
1.0 ( Typical )
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
o
C
A
RADIATION HARDENED JANSR2N7481U3
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
REF: MIL-PRF-19500/703
10/24/03
www.irf.com
1
100V, N-CHANNEL
* Current is limited by package
For footnotes refer to the last page
TECHNOLOGY
Features:
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
SMD-0.5
IRHNJ57130
Product Summary
Part Number Radiation Level R
DS(on)
IRHNJ57130 100K Rads (Si)
IRHNJ53130 300K Rads (Si)
IRHNJ54130 600K Rads (Si)
IRHNJ58130 1000K Rads (Si) 0.075
I
D
QPL Part Number
JANSR2N7481U3
JANSF2N7481U3
JANSG2N7481U3
JANSH2N7481U3
0.06
0.06
0.06
22A*
22A*
22A*
22A*
PD - 93754E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHNJ58130 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| IRHNJ53230 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| IRHNJ54230 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| IRHNJ58230 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| IRHNJ58Z30 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHNJ54230 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| IRHNJ54230SE | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNJ54234SE | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNJ54Z30 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHNJ57034 | 制造商:International Rectifier 功能描述:N CH MOFET 60V .30OHMS 22AMAX - Rail/Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。