欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: IRHQ9110
英文描述: TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 100V V(BR)DSS | 2.3A I(D) | LLCC
中文描述: 晶體管| MOSFET的|陣| P通道| 100V的五(巴西)直| 2.3AI(四)| LLCC
文件頁數: 1/8頁
文件大小: 132K
代理商: IRHQ9110
Absolute Maximum Ratings ( Per Die)
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
75
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
-2.3
-1.5
-9.2
12
0.1
±20
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-2.3
1.2
9.0
-55 to 150
300 (for 5s)
0.89 (Typical)
g
Pre-Irradiation
International Rectifier’s RAD-Hard
TM
HEXFET
MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite ap-
plications. These devices have been characterized for
both Total Dose and Single Event Effects (SEE). The com-
bination of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC to DC
converters and motor control. These devices retain all of
the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
12/27/00
www.irf.com
1
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
LCC-28
Product Summary
Part Number Radiation Level R
DS(on)
IRHQ9110 100K Rads (Si) 1.1
IRHQ93110 300K Rads (Si) 1.1
I
D
-2.3A
-2.3A
IRHQ9110
100V, QUAD P-CHANNEL
RAD-Hard
MOSFET TECHNOLOGY
HEXFET
PD - 93794A
相關PDF資料
PDF描述
IRHQ93110 TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 100V V(BR)DSS | 2.3A I(D) | LLCC
IRHSLNA53064 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | SMT
IRHSLNA53Z60 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT
IRHSLNA54064 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | SMT
IRHSLNA54Z60 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT
相關代理商/技術參數
參數描述
IRHQ9110SCS 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk
IRHQ9110SCV 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk
IRHQ93110 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk
IRHSLNA53064 制造商:IRF 制造商全稱:International Rectifier 功能描述:RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2)
IRHSLNA53Z60 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT
主站蜘蛛池模板: 廊坊市| 勐海县| 玛沁县| 陵水| 平山县| 富顺县| 绥中县| 浦县| 禹州市| 安新县| 锦州市| 平顶山市| 泸西县| 永和县| 天长市| 南阳市| 石门县| 上栗县| 宁陵县| 合阳县| 团风县| 合川市| 沭阳县| 治县。| 彝良县| 抚州市| 盐城市| 海晏县| 红河县| 满洲里市| 安多县| 甘泉县| 儋州市| 揭阳市| 佛山市| 苗栗县| 唐海县| 松阳县| 沂南县| 盖州市| 亚东县|