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參數(shù)資料
| 型號(hào)： | IRHY58230CM |
| 廠商： | International Rectifier |
| 英文描述： | 200V, N-Channel Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 為200V，N溝道通孔抗輻射功率MOSFET（200V的電壓，通孔安裝抗輻射功率?溝道馬鞍山場(chǎng)效應(yīng)管） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 119K |
| 代理商： | IRHY58230CM |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
13
8.2
52
75
0.6
±20
60
13
7.5
4.4
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063in./1.6mm from case for 10sec)
4.3 ( Typical )
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
o
C
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
IRHY57230CM
200V, N-CHANNEL
TECHNOLOGY
R
5
1/26/2000
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
IRHY57230CM 100K Rads (Si) 0.20
IRHY53230CM 300K Rads (Si) 0.20
IRHY54230CM 600K Rads (Si) 0.20
IRHY58230CM 1000K Rads (Si) 0.25
I
D
13A
13A
13A
13A
Features:
n
Single Event Effect (SEE) Hardened
n
Ultra Low R
DS(on)
n
Low Total Gate Charge
n
Proton Tolerant
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Ceramic Package
n
Light Weight
For footnotes refer to the last page
PD - 93827
TO-257AA
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PDF描述 |
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| IRHY54230CM | 200V, N-Channel Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |
| IRHY53Z30CM | 30V, N-Channel Thru-hole Radiation Hardened Power MOSFET(30V,通孔安裝抗輻射功率N溝道MOSFET) |
| IRHY57Z30CM | 30V, N-Channel Thru-hole Radiation Hardened Power MOSFET(30V,通孔安裝抗輻射功率N溝道MOSFET) |
| IRHY58Z30CM | 30V, N-Channel Thru-hole Radiation Hardened Power MOSFET(30V,通孔安裝抗輻射功率N溝道MOSFET) |
| IRHY54Z30CM | 30V, N-Channel Thru-hole Radiation Hardened Power MOSFET(30V,通孔安裝抗輻射功率N溝道MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHY58Z30CM | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHY593034CM | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHY593034CMSCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHY593034CMSCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHY593130CM | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
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