欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: IRHY8230CM
廠商: International Rectifier
英文描述: RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
中文描述: 抗輻射功率MOSFET的通孔(對257AA)
文件頁數: 1/8頁
文件大小: 105K
代理商: IRHY8230CM
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
9.4
6.0
37
75
0.6
±20
150
5.5
7.5
16
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( 0.063 in.(1.6mm) from case for 10s)
7.0 (Typical )
g
Pre-Irradiation
International Rectifier’s RADHard HEXFET
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
technol-
o
C
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
12/17/01
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
I
D
QPL Part Number
IRHY7230CM 100K Rads (Si)
0.40
IRHY3230CM 300K Rads (Si)
0.40
IRHY4230CM 600K Rads (Si)
0.40
IRHY8230CM 1000K Rads (Si) 0.40
9.4A
9.4A
9.4A
9.4A
JANSR2N7381
JANSF227381
JANSG2N7381
JANSH2N7381
For footnotes refer to the last page
IRHY7230CM
JANSR2N7381
200V, N-CHANNEL
REF:MIL-PRF-19500/614
RAD-Hard
HEXFET
TECHNOLOGY
TO-257AA
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Light Weight
PD - 91273C
相關PDF資料
PDF描述
IRHY4230CM PUBLICATIONS, BOOKS RoHS Compliant: NA
IRHY53034CM 60V, N-Channel Thru-hole Radiation Hardened Power MOSFET(60V,通孔安裝抗輻射功率N溝道MOS場效應管)
IRHY54034CM 60V, N-Channel Thru-hole Radiation Hardened Power MOSFET(60V,通孔安裝抗輻射功率N溝道MOS場效應管)
IRHY57034CM 60V, N-Channel Thru-hole Radiation Hardened Power MOSFET(60V,通孔安裝抗輻射功率N溝道MOS場效應管)
IRHY58034CM 60V, N-Channel Thru-hole Radiation Hardened Power MOSFET(60V,通孔安裝抗輻射功率N溝道MOS場效應管)
相關代理商/技術參數
參數描述
IRHY9130CM 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 11A 3PIN TO-257 - Rail/Tube
IRHY9230CM 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk
IRHY9230CMSCS 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk
IRHY93130CM 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk
IRHY93230CM 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk
主站蜘蛛池模板: 隆尧县| 河南省| 怀集县| 凤山县| 城步| 中卫市| 万山特区| 江门市| 宿迁市| 深泽县| 安乡县| 乌兰浩特市| 抚州市| 红原县| 二连浩特市| 商洛市| 乌兰察布市| 江津市| 府谷县| 无锡市| 丹巴县| 建水县| 昆明市| 临潭县| 敦煌市| 久治县| 江北区| 当阳市| 济南市| 肇庆市| 民权县| 屏东县| 兴安盟| 海淀区| 通江县| 广丰县| 托克逊县| 噶尔县| 淳安县| 吉木萨尔县| 永寿县|