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參數(shù)資料
| 型號(hào)： | IRKH430-16 |
| 英文描述： | 1600V 430A Doubler Circuit Positive Phase Control Thyristor/Diode in a Super MAGN-A-Pak package |
| 中文描述： | 1600V 430A倍增器電路積極相位控制晶閘管/在超級(jí)磁共振二極管阿- Pak封裝 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 98K |
| 代理商： | IRKH430-16 |
IRK.430.. Series
3
Bulletin I27400 rev. A 09/97
www.irf.com
T
J
Max. junction operating temperature range
- 40 to 130
°C
T
stg
Max. storage temperature range
- 40 to 150
R
thJC
Max. thermal resistance, junction to
0.065
K/W
Per junction, DC operation
case
R
thC-hs
Max. thermal resistance, case to
0.02
K/W
heatsink
T
Mounting torque ± 10%SMAP to heatsink
6 - 8
Nm
busbar to SMAP
12 - 15
wt
Approximate weight
1500
g
Case style
SUPER MAGN-A-pak
See outline table
dv/dt
Maximum critical rate of rise of off-state
1000
V/μs
T
J
= 130°C., linear to V
D
= 80% V
DRM
voltage
V
INS
I
RRM
I
DRM
RMS isolation voltage
3000
V
t = 1 s
Maximum peak reverse and off-state
100
mA
T
J
= T
J
max., rated V
DRM
/V
RRM
applied
leakage current
Parameter
IRK.430..
Units Conditions
Blocking
Parameter
IRK.430..
Units Conditions
Triggering
P
GM
P
G(AV)
+ I
GM
+ V
GM
- V
GM
I
GT
V
GT
I
GD
V
GD
Maximum peak gate power
10
W
T
J
= T
J
max., t
p
< 5ms
T
J
= T
J
max., f = 50Hz, d% = 50
T
J
= T
J
max., t
p
< 5ms
Maximum peak average gate power
2.0
W
Maximum peak positive gate current
3.0
A
Maximum peak positive gate voltage
20
V
Maximum peak negative gate voltage
5.0
V
Max. DC gate current required to trigger
200
mA
T
J
= 25°C
T
J
= 25°C
T
J
= T
J
max.
V
ak
12V
V
ak
12V
DC gate voltage required to trigger
3.0
V
DC gate current not to trigger
10
mA
DC gate voltage not to trigger
0.25
V
Parameter
IRK.430..
Units Conditions
Thermal and Mechanical Specifications
A mounting compound is recommended and the
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound
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PDF描述 |
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| IRKH430-20 | 2000V 430A Doubler Circuit Positive Phase Control Thyristor/Diode in a Super MAGN-A-Pak package |
| IRKL430-18 | 1800V 430A Doubler Circuit Positive Phase Control Thyristor/Diode in a Super MAGN-A-Pak package |
| IRKT430-16 | 1600V 430A Doubler Circuit Positive Phase Control Thyristor/Thyristor in a Super MAGN-A-Pak package |
| IRKH430-16 | Insulated Gate Bipolar Transistors (IGBTs)(額定電壓16V,快速H結(jié)構(gòu)絕緣柵型雙極型晶體管) |
| IRKH430-18 | Insulated Gate Bipolar Transistors (IGBTs)(額定電壓18V,H結(jié)構(gòu)快速絕緣柵型雙極型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRKH430-18 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:SUPER MAGN-A-pak-TM Power Modules |
| IRKH430-20 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:SUPER MAGN-A-pak-TM Power Modules |
| IRKH500-08 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:SUPER MAGN-A-pak Power Modules |
| IRKH500-12 | 功能描述:SCR模塊 1200 Volt 500 Amp RoHS:否 制造商:Vishay Semiconductors 開(kāi)啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開(kāi)啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK |
| IRKH500-14 | 功能描述:SCR模塊 1400 Volt 500 Amp RoHS:否 制造商:Vishay Semiconductors 開(kāi)啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開(kāi)啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK |
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