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參數資料
型號: IRKL430-18
廠商: International Rectifier
英文描述: Insulated Gate Bipolar Transistors (IGBTs)(額定電壓18V,L結構快速絕緣柵型雙極型晶體管)
中文描述: 絕緣門雙極晶體管(IGBTs)(額定電壓18V的報結構快速絕緣柵型雙極型晶體管)
文件頁數: 3/8頁
文件大小: 98K
代理商: IRKL430-18
IRK.430.. Series
3
Bulletin I27400 rev. A 09/97
www.irf.com
T
J
Max. junction operating temperature range
- 40 to 130
°C
T
stg
Max. storage temperature range
- 40 to 150
R
thJC
Max. thermal resistance, junction to
0.065
K/W
Per junction, DC operation
case
R
thC-hs
Max. thermal resistance, case to
0.02
K/W
heatsink
T
Mounting torque ± 10%SMAP to heatsink
6 - 8
Nm
busbar to SMAP
12 - 15
wt
Approximate weight
1500
g
Case style
SUPER MAGN-A-pak
See outline table
dv/dt
Maximum critical rate of rise of off-state
1000
V/μs
T
J
= 130°C., linear to V
D
= 80% V
DRM
voltage
V
INS
I
RRM
I
DRM
RMS isolation voltage
3000
V
t = 1 s
Maximum peak reverse and off-state
100
mA
T
J
= T
J
max., rated V
DRM
/V
RRM
applied
leakage current
Parameter
IRK.430..
Units Conditions
Blocking
Parameter
IRK.430..
Units Conditions
Triggering
P
GM
P
G(AV)
+ I
GM
+ V
GM
- V
GM
I
GT
V
GT
I
GD
V
GD
Maximum peak gate power
10
W
T
J
= T
J
max., t
p
< 5ms
T
J
= T
J
max., f = 50Hz, d% = 50
T
J
= T
J
max., t
p
< 5ms
Maximum peak average gate power
2.0
W
Maximum peak positive gate current
3.0
A
Maximum peak positive gate voltage
20
V
Maximum peak negative gate voltage
5.0
V
Max. DC gate current required to trigger
200
mA
T
J
= 25°C
T
J
= 25°C
T
J
= T
J
max.
V
ak
12V
V
ak
12V
DC gate voltage required to trigger
3.0
V
DC gate current not to trigger
10
mA
DC gate voltage not to trigger
0.25
V
Parameter
IRK.430..
Units Conditions
Thermal and Mechanical Specifications
A mounting compound is recommended and the
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound
相關PDF資料
PDF描述
IRKL430-20 Insulated Gate Bipolar Transistors (IGBTs)(額定電壓20V,L結構快速絕緣柵型雙極型晶體管)
IRKT430-16 Insulated Gate Bipolar Transistors (IGBTs)(額定電壓16V,快速T結構絕緣柵型雙極型晶體管)
IRKT430-18 Insulated Gate Bipolar Transistors (IGBTs)(額定電壓18V,T結構快速絕緣柵型雙極型晶體管)
IRKT430-20 Insulated Gate Bipolar Transistors (IGBTs)(額定電壓20V,T結構快速絕緣柵型雙極型晶體管)
IRKH430-18 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.8KV V(RRM)|430A I(T)
相關代理商/技術參數
參數描述
IRKL430-20 制造商:IRF 制造商全稱:International Rectifier 功能描述:SUPER MAGN-A-pak-TM Power Modules
IRKL500-08 制造商:IRF 制造商全稱:International Rectifier 功能描述:SUPER MAGN-A-pak Power Modules
IRKL500-12 制造商:IRF 制造商全稱:International Rectifier 功能描述:SUPER MAGN-A-pak Power Modules
IRKL500-14 制造商:IRF 制造商全稱:International Rectifier 功能描述:SUPER MAGN-A-pak Power Modules
IRKL500-16 功能描述:SCR模塊 1600 Volt 500 Amp RoHS:否 制造商:Vishay Semiconductors 開啟狀態 RMS 電流 (It RMS):260 A 不重復通態電流:4000 A 最大轉折電流 IBO:4200 A 額定重復關閉狀態電壓 VDRM:1.6 kV 關閉狀態漏泄電流(在 VDRM IDRM 下):20 mA 開啟狀態電壓:1.43 V 保持電流(Ih 最大值): 柵觸發電壓 (Vgt): 柵觸發電流 (Igt): 最大工作溫度:+ 150 C 安裝風格:Chassis 封裝 / 箱體:INT-A-PAK
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