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參數資料
| 型號： | IRKV250-10 |
| 英文描述： | 1000V 250A Center-Tap Common Anode Phase Control Thyristor/Thyristor in a MAGN-A-Pak package |
| 中文描述： | 1000V 250A章中心抽頭共陽極相位控制晶閘管/晶閘管的磁共振- à - Pak封裝 |
| 文件頁數： | 2/12頁 |
| 文件大小： | 381K |
| 代理商： | IRKV250-10 |
IRK.136, .142, .162 Series
Bulletin I27117 rev. C 03/02
2
www.irf.com
Type number
Voltage
Code
V
RRM
/V
DRM
, Maximum repetitive V
RSM
/V
DSM
, Maximum non-repetitive
peak reverse voltage
V
I
I
@ 125°C
m A
peak reverse voltage
V
IRK.136
04
400
500
50
IRK.142
08
800
900
IRK.162
12
1200
1300
14
1400
1500
16
1600
1700
I
T(AV)
Max. average on-state current
135
140
160
A
180° conduction, half sine wave
@ Case temperature
85
85
85
°C
I
T(RMS)
Max. RMS on-state current
300
310
355
A
as AC switch
I
TSM
Maximum peak, one-cycle
3200
4500
4870
A
t = 10ms
No voltage
on-state, non-repetitive
3360
4712
5100
t = 8.3ms reapplied
surge current
2700
3785
4100
t = 10ms
100% V
RRM
2800
3963
4300
t = 8.3ms reapplied
Sine half wave,
I
2
t
Maximum I
2
t for fusing
51.5
102
119
KA
2
s
t = 10ms
No voltage
Initial T
J
= T
J
max.
47
92.5
108
t = 8.3ms reapplied
36.5
71.6
84
t = 10ms
100% V
RRM
33.3
65.4
76.7
t = 8.3ms reapplied
I
2
√
t
Maximum I
2
√
t for fusing
515.5
1013
1190
KA
2
√
s t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold
voltage
0.86
0.83
0.8
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), @ T
J
max.
V
T(TO)2
High level value of threshold
voltage
1.05
1
0.98
(I >
π
x I
T(AV)
), @ T
J
max.
r
t1
Low level value on-state
2.02
1.78
1.67
m
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), @ T
J
max.
slope resistance
r
t2
High level value on-state
1.65
1.43
1.38
(I >
π
x I
T(AV)
), @ T
J
max.
slope resistance
V
TM
Maximum forward voltage drop
1.57
1.55
1.54
V
I
TM
=
π
x I
T(AV)
, T
J
= 25°C, 180°conduction
I
H
I
L
Maximum holding current
200
mA
Anode supply = 6V initial I
T
= 30A, T
J
= 25°C
Anode supply = 6V resistive load = 1
Maximum latching current
400
mA
Gate pulse: 10V, 100μs, T
J
= 25°C
t
gd
Typical delay time
1
T
J
= 25
o
C
T
J
= 25
o
C
I
TM
= 300 A; -dI/dt = 15 A/μs; T
J
= T
J
max
V
r
= 50 V; dV/dt = 20 V/μs; Gate 0 V, 100
Gate Current=1A dIg/
dt
=1A/μs
t
gr
t
q
Typical rise time
2
μs
Vd=0,67% V
DRM
Typical turn-off time
50 - 200
Parameter
IRK.136
IRK.142
IRK.162
Units Conditions
Forward Conduction
Switching
Electrical Specifications
Voltage Ratings
相關PDF資料 |
PDF描述 |
|---|---|
| IRKV250-12 | 1200V 250A Center-Tap Common Anode Phase Control Thyristor/Thyristor in a MAGN-A-Pak package |
| IRKL142-12 | THYRISTOR/DIODE and THYRISTOR/THYRISTOR |
| IRKT136-12 | THYRISTOR/DIODE and THYRISTOR/THYRISTOR |
| IRK.136 | THYRISTOR/DIODE and THYRISTOR/THYRISTOR |
| IRK.142 | THYRISTOR/DIODE and THYRISTOR/THYRISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRKV250-10N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR|DUAL|CA|1KV V(RRM)|250A I(T) |
| IRKV250-12 | 功能描述:SCR模塊 1200 Volt 250 Amp RoHS:否 制造商:Vishay Semiconductors 開啟狀態 RMS 電流 (It RMS):260 A 不重復通態電流:4000 A 最大轉折電流 IBO:4200 A 額定重復關閉狀態電壓 VDRM:1.6 kV 關閉狀態漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發電壓 (Vgt): 柵觸發電流 (Igt): 最大工作溫度:+ 150 C 安裝風格:Chassis 封裝 / 箱體:INT-A-PAK |
| IRKV250-12D20 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR|DUAL|CA|1.2KV V(RRM)|250A I(T) |
| IRKV250-12D20N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR|DUAL|CA|1.2KV V(RRM)|250A I(T) |
| IRKV250-12N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR|DUAL|CA|1.2KV V(RRM)|250A I(T) |
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