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參數資料
型號: IRKV250-12
英文描述: 1200V 250A Center-Tap Common Anode Phase Control Thyristor/Thyristor in a MAGN-A-Pak package
中文描述: 1200伏250A章中心抽頭共陽極相位控制晶閘管/晶閘管的磁共振- à - Pak封裝
文件頁數: 3/12頁
文件大小: 381K
代理商: IRKV250-12
IRK.136, .142, .162 Series
Bulletin I27117 rev. C 03/02
3
www.irf.com
Thermal and Mechanical Specifications
T
J
Max. junction operating
temperature range
Max. storage temperature
range
Max. thermal resistance,
junction to case
Max. thermal resistance,
case to heatsink
Mounting
torque ± 10% busbar to IAP
Approximate weight
Case Style
-40 to 125
°C
T
stg
-40 to 150
°C
R
thJC
0.18
0.18
0.16
K/W
DC operation, per junction
R
thCS
0.05
K/W
Mounting surface smooth, flat and greased
Per module
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound. Lubricated threads.
T
IAP to heatsink
4 to 6
4 to 6
200 (7.1)
New Int-A-Pak
Nm
wt
g(oz)
Triggering
P
GM
P
G(AV)
Max. average gate power
Max. peak gate power
12
W
tp
5ms, T
J
= T
J
max.
f=50Hz, T
J
= T
J
max.
tp
5ms, T
J
= T
J
max.
3
W
I
GM
-V
GT
Max. peak gate current
3
A
Max. peak negative
10
V
gate voltage
V
GT
Max. required DC gate
voltage to trigger
4
V
T
J
= - 40°C
T
J
= 25°C
T
J
= T
J
max.
T
J
= - 40°C
T
J
= 25°C
T
J
= T
J
max.
@ T
J
= T
J
max., rated V
DRM
applied
Anode supply = 6V, resistive
load; Ra = 1
2.5
1.7
270
150
80
0.3
I
GT
Max. required DC gate
current to trigger
Anode supply = 6V, resistive
load; Ra = 1
mA
V
GD
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
Max. rate of rise of
turned-on current
V
I
GD
10
mA
di/
dt
300
A/μs
@ T
J
= T
J
max., I
TM
= 400A
rated V
DRM
applied
Sinusoidal conduction @ T
J
max.
120
o
90
o
Rectangular conduction @ T
J
max.
120
o
90
o
Devices
Units
180
o
60
o
30
o
180
o
60
o
30
o
IRK.136
0.007
0.01
0.013
0.0155
0.017
0.009
0.012
0.014
0.015
0.017
IRK.142
0.0019
0.0019
0.0020
0.0020
0.0021
0.0018
0.0022
0.0023
0.0023
0.0020 K/W
IRK.162
0.0030
0.0031
0.0032
0.0033
0.0034
0.0029
0.0036
0.0039
0.0041
0.0040
R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Parameter
IRK.136
IRK.142
IRK.162
Units Conditions
Parameter
IRK.136
IRK.142
IRK.162
Units Conditions
Blocking
I
RRM
I
DRM
Maximum peak reverse and
off-state leakage current
50
mA
T
J
= 125
o
C
V
INS
RMS isolation voltage
3500
V
50Hz, circuit to base, all terminals shorted, t = 1s
dV/dt critical rate of rise of off-state voltage
1000
V/μs
T
J
= T
J
max., exponential to 67% rated V
DRM
相關PDF資料
PDF描述
IRKL142-12 THYRISTOR/DIODE and THYRISTOR/THYRISTOR
IRKT136-12 THYRISTOR/DIODE and THYRISTOR/THYRISTOR
IRK.136 THYRISTOR/DIODE and THYRISTOR/THYRISTOR
IRK.142 THYRISTOR/DIODE and THYRISTOR/THYRISTOR
IRK.162 THYRISTOR/DIODE and THYRISTOR/THYRISTOR
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