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參數資料
| 型號： | IRL2310 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET(HEXFET 功率 MOS場效應管) |
| 中文描述： | HEXFET功率MOSFET（馬鞍山的HEXFET功率場效應管） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 55K |
| 代理商： | IRL2310 |
IRL2310
HEXFET
Power MOSFET
PD - 9.1275
Revision 1
V
DSS
= 100V
R
DS(on)
= 0.040
I
D
= 40A
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
R
DS(on)
Specified at V
GS
= 4.5V & 10V
175°C Operating Temperature
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design for which HEXFET Power MOSFETs are well
known, provides the designer with an extremely efficient device for use in a
wide variety of application.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Description
Thermal Resistance
Parameter
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
0.90
––––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Absolute Maximum Ratings
Parameter
Max.
40
29
160
170
1.1
±20
500
24
17
5.5
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 5.0V
Continuous Drain Current, V
GS
@ 5.0V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
°C
300 (1.6mm from case)
10 lbfin (1.1Nm)
PRELIMINARY
相關PDF資料 |
PDF描述 |
|---|---|
| IRL2910L | HEXFET POWER MOSFET |
| IRL2910S | HEXFET POWER MOSFET |
| IRL3402 | N Channel HEXFET Power MOSFET(N 溝道HEXFET功率MOS場效應管) |
| IRL3705N | N-Channel HEXFET Power MOSFET(N溝道 HEXFET 功率MOS場效應管) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRL2505 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-220AB |
| IRL2505 | 制造商:International Rectifier 功能描述:MOSFET N TO-220AB |
| IRL2505L | 功能描述:MOSFET N-CH 55V 104A TO-262 RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRL2505LPBF | 制造商:International Rectifier 功能描述:104 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| IRL2505PBF | 功能描述:MOSFET MOSFT 55V 104A 8mOhm 86.7nC LogLvAB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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