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參數資料
| 型號： | IRL3202 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數： | 1/7頁 |
| 文件大小： | 89K |
| 代理商： | IRL3202 |
Parameter
Max.
48
30
190
69
0.56
± 10
14
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100μs)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
V
V
GS
V
GSM
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
270
29
6.9
5.0
mJ
A
mJ
V/ns
-55 to + 150
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
11/18/97
IRL3202
PRELIMINARY
HEXFET
Power MOSFET
PD 9.1695A
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.
S
D
G
Absolute Maximum Ratings
Parameter
Typ.
–––
0.50
–––
Max.
1.8
–––
62
Units
R
q
JC
R
q
CS
R
q
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
V
DSS
= 20V
R
DS(on)
= 0.016
W
I
D
= 48A
TO-220AB
Description
l
Advanced Process Technology
l
Optimized for 4.5V-7.0V Gate Drive
l
Ideal for CPU Core DC-DC Converters
l
Fast Switching
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRL3202HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 20V 48A 3-Pin(3+Tab) TO-220AB |
| IRL3202L | 功能描述:MOSFET N-CH 20V 48A TO-262 RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRL3202PBF | 功能描述:MOSFET 20V 1 N-CH HEXFET 19mOhms 28.7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRL3202PBF | 制造商:International Rectifier 功能描述:MOSFET Transistor RoHS Compliant:Yes |
| IRL3202S | 功能描述:MOSFET N-CH 20V 48A D2PAK RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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