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參數資料
型號: IRLBA3803P
廠商: International Rectifier
英文描述: HEXFET Power MOSFET(HEXFET 功率MOS場效應管)
中文描述: HEXFET功率MOSFET(馬鞍山的HEXFET功率場效應管)
文件頁數: 1/8頁
文件大?。?/td> 121K
代理商: IRLBA3803P
IRLBA3803/P
HEXFET
Power MOSFET
PD - 91841A
G
Advanced Process Technology
G
175°C Operating Temperature
G
Fast Switching
G
Fully Avalanche Rated
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The Super-220 is a package that has been designed to have
the same mechanical outline and pinout as the industry
standard TO-220 but can house a considerably larger silicon
die. It has increased current handling capability over both the
TO-220 and the much larger TO-247 package.
This makes t deal to reduce component count n multiparalled
TO-220 applications, reduce system power dissipation,
upgrade existing designs or have TO-247 performance in a
TO-220 outline.
This package has also been designed to meet automotive
qualification standard Q101.
Absolute Maximum Ratings
Description
V
DSS
= 30V
R
DS(on)
= 0.005
I
D
= 179A
S
D
G
1/29/99
G
Logic-Level Gate Drive
www.irf.com
1
Parameter
Typ.
–––
0.5
–––
Max.
0.55
–––
58
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
Super
_
220
Parameter
Max.
179
126
720
270
1.8
±16
610
71
27
5.0
-55 to + 175
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
300 (1.6mm from case )
20
N
°C
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相關代理商/技術參數
參數描述
IRLBA3803PPBF 制造商:International Rectifier 功能描述:MOSFET, 30V, 179A, 5 MOHM, 93.3 NC QG, LOGIC LEVEL, TO-273AA 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 179A 3PIN TO-273AA - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N 30V 179A SUPER 220 制造商:International Rectifier 功能描述:MOSFET, N, 30V, 179A, SUPER 220 制造商:International Rectifier 功能描述:MOSFET, N, 30V, 179A, SUPER 220, Transistor Polarity:N Channel, Continuous Drain Current Id:179A, Drain Source Voltage Vds:30V, On Resistance Rds(on):5mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1V, Power Dissipation , RoHS Compliant: Yes 制造商:International Rectifier 功能描述:N CH MOSFET, 30V, 179A, SUPER-220, Transistor Polarity:N Channel, Continuous Dra
IRLBD59N04E 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET
IRLBD59N04EPBF 制造商:International Rectifier 功能描述:MOSFET N D2-PAK 40V 59A
IRLBD59N04ETRLP 功能描述:MOSFET N-CH 40V 59A D2PAK-5 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
IRLBL1304 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET㈢ Power MOSFET
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