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| 型號： | IRLI2203 |
| 廠商： | International Rectifier |
| 元件分類： | 其它接口 |
| 英文描述： | TERMINAL |
| 中文描述： | IGBT模塊 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 328K |
| 代理商： | IRLI2203 |
Parameter
Min.
––––
––––
Typ.
––––
––––
Max.
3.1
65
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient
IRLI2203G
HEXFET
Power MOSFET
PD - 9.1092A
V
DSS
= 30V
R
DS(on)
= 0.010
I
D
= 52A
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and external
heatsink. This isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip
or by a single screw fixing.
°C/W
Thermal Resistance
Parameter
Max.
52
37
210
48
0.32
±20
90
31
4.8
4.5
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Collector Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
°C
300 (1.6mm from case)
10 lbfin (1.1Nm)
Absolute Maximum Ratings
Description
Advanced Process Technology
Ultra Low On-Resistance
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Logic-Level Gate Drive
R
DS(on)
Specified at V
GS
=5.0V & 10V
Revision 1
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRLI2203G | Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A) |
| IRLI2910 | HEXFET Power MOSFET |
| IRLI3615 | HEXFET Power MOSFET |
| IRLI3705N | HEXFET Power MOSFET |
| IRLI3705 | HEXFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRLI2203G | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A) |
| IRLI2203N | 功能描述:MOSFET N-CH 30V 61A TO220FP RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRLI2203NPBF | 功能描述:MOSFET MOSFT 30V 61A 7mOhm 73.3nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLI2505 | 功能描述:MOSFET N-CH 55V 58A TO220FP RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRLI2505PBF | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 58A 3-Pin(3+Tab) TO-220 Full-Pak 制造商:International Rectifier 功能描述:MOSFET N 55V 58A TO-220FP 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 55V, 58A TO-220FP, Transistor Polarity:N Channel, Continuous D 制造商:International Rectifier 功能描述:58 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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