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參數(shù)資料
| 型號： | IRLIB9343 |
| 廠商： | International Rectifier |
| 英文描述： | DIGITAL AUDIO MOSFET |
| 中文描述： | 數(shù)字音頻MOSFET的 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 190K |
| 代理商： | IRLIB9343 |
www.irf.com
1
4/1/04
Notes
through are on page 7
Description
This Digital Audio HEXFET
is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Features
Advanced Process Technology
Key Parameters Optimized for Class-D Audio
Amplifier Applications
Low R
DSON
for Improved Efficiency
Low Q
g
and Q
sw
for Better THD and Improved
Efficiency
Low Q
rr
for Better THD and Lower EMI
175°C Operating Junction Temperature for
Ruggedness
Repetitive Avalanche Capability for Robustness and
Reliability
S
D
G
V
DS
R
DS(ON)
typ. @ V
GS
= -10V
R
DS(ON)
typ. @ V
GS
= -4.5V
Q
g
typ.
T
J
max
-55
93
150
31
175
V
m
m
nC
°C
Key Parameters
IRLIB9343
TO-220 Full-Pak
Absolute Maximum Ratings
Parameter
Units
V
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
A
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Mounting Torque, 6-32 or M3 screw
W
W/°C
°C
T
J
T
STG
lbf in (N m)
Thermal Resistance
Parameter
Typ.
–––
–––
Max.
3.84
65
Units
°C/W
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient
Max.
-55
-10
-60
33
20
0.26
±20
-14
-40 to + 175
10 (1.1)
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