- 您現在的位置：買賣IC網 > PDF目錄377535 > IRLL024ZPBF (International Rectifier) HEXFET㈢ Power MOSFET PDF資料下載
參數資料
| 型號： | IRLL024ZPBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET㈢ Power MOSFET |
| 中文描述： | ㈢的HEXFET功率MOSFET |
| 文件頁數： | 1/10頁 |
| 文件大小： | 228K |
| 代理商： | IRLL024ZPBF |
IRLL024ZPbF
HEXFET
Power MOSFET
V
DSS
= 55V
R
DS(on)
= 60m
I
D
= 5.0A
www.irf.com
1
AUTOMOTIVE MOSFET
PD - 95990
SOT-223
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 150°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an ex-
tremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
S
D
G
Description
Advanced Process Technology
Ultra Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Features
Absolute Maximum Ratings
Parameter
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
A
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
W
W/°C
V
mJ
V
GS
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
T
J
Operating Junction and
T
STG
Storage Temperature Range
Thermal Resistance
A
mJ
°C
Parameter
Typ.
–––
–––
Max.
45
120
Units
R
θ
JA
R
θ
JA
Junction-to-Ambient (PCB mount, steady state)
Junction-to-Ambient (PCB mount, steady state)
°C/W
-55 to + 150
1.0
0.02
± 16
21
Max.
5.0
4.0
40
2.8
38
See Fig.12a, 12b, 15, 16
相關PDF資料 |
PDF描述 |
|---|---|
| IRLL024Z | AUTOMOTIVE MOSFET |
| IRLL110PBF | HEXFET㈢ Power MOSFET |
| IRLL110 | HEXFET Power MOSFET(HEXFET 功率MOS場效應管) |
| IRLL2703PBF | HEXFET Power MOSFET |
| IRLL2705PBF | HEXFET POWER MOSFET ( VDSS = 55V , RDS(on) = 0.04ヘ , ID = 3.8A ) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRLL024ZTR | 制造商:International Rectifier 功能描述:MOSFET, 55V, 5A, 60 mOhm, 7 nC Qg, Logic Level, SOT-223 |
| IRLL024ZTRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 5A 4-Pin(3+Tab) SOT-223 T/R |
| IRLL024ZTRPBF | 功能描述:MOSFET MOSFT 55V 5A 60mOhm 7nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLL110 | 功能描述:MOSFET N-Chan 100V 1.5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLL110PBF | 功能描述:MOSFET N-Chan 100V 1.5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。