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參數資料
| 型號： | IRLML5203 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET(HEXFET 功率MOS場效應管) |
| 中文描述： | HEXFET功率MOSFET（馬鞍山的HEXFET功率場效應管） |
| 文件頁數： | 1/9頁 |
| 文件大小： | 137K |
| 代理商： | IRLML5203 |
Parameter
Max.
-30
-3.0
-2.4
-24
1.25
0.80
10
± 20
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
mW/°C
V
°C
V
GS
T
J,
T
STG
-55 to + 150
8/28/00
Parameter
Max.
100
Units
°C/W
R
θ
JA
www.irf.com
Maximum Junction-to-Ambient
Thermal Resistance
Absolute Maximum Ratings
W
1
IRLML5203
HEXFET
Power MOSFET
R
DS(on)
max (m
98@V
GS
= -10V
165@V
GS
= -4.5V
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to
produce a HEXFET Power MOSFET with the industry's
smallest footprint. This package, dubbed the Micro3
TM
,
is ideal for applications where printed circuit board
space is at a premium. The low profile (<1.1mm) of
the Micro3 allows it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
Description
l
Ultra Low On-Resistance
l
P-Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
l
Low Gate Charge
PD - 93967
V
DSS
-30V
)
I
D
-3.0A
-2.6A
S
G
1
2
D
3
Micro3
TM
PROVISIONAL
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRLML5203GPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRLML5203GTRPBF | 功能描述:MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLML5203PBF | 制造商:International Rectifier 功能描述:Bulk 制造商:International Rectifier 功能描述:MOSFETP CH30V3ASOT23 制造商:International Rectifier 功能描述:MOSFET,P CH,30V,3A,SOT23 制造商:International Rectifier 功能描述:P CHANNEL MOSFET, -30V, 3A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):98mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-2.5V ;RoHS Compliant: Yes |
| IRLML5203TR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 30V 3A 3-Pin Micro T/R 制造商:International Rectifier 功能描述:3 A, 30 V, 0.098 ohm, P-CHANNEL, Si, POWER, MOSFET |
| IRLML5203TRPBF | 功能描述:MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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