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參數資料
| 型號： | IRLML6402 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大小： | 81K |
| 代理商： | IRLML6402 |
Parameter
Typ.
75
Max.
100
Units
°C/W
R
θ
JA
Maximum Junction-to-Ambient
IRLML6402
HEXFET
Power MOSFET
These P-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in battery and
load management.
A thermally enhanced large pad leadframe has been incorporated
into the standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This package,
dubbed the Micro3
, is ideal for applications where printed
circuit board space is at a premium. The low profile (<1.1mm)
of the Micro3 allows it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
The thermal resistance and power dissipation are the best
available.
Absolute Maximum Ratings
Thermal Resistance
V
DSS
= -20V
R
DS(on)
= 0.065
l
Ultra Low On-Resistance
l
P-Channel MOSFET
l
SOT-23 Footprint
l
Low Profile (<1.1mm)
l
Available in Tape and Reel
l
Fast Switching
Description
8/13/99
www.irf.com
1
S
D
G
PD- 93755
Parameter
Max.
-20
-3.7
-2.2
-22
1.3
0.8
0.01
11
± 12
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
W/°C
mJ
V
°C
E
AS
V
GS
T
J,
T
STG
-55 to + 150
W
Micro3
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| IRLML6402TR | HEXFET Power MOSFET |
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| IRLML2803 | Power MOSFET(Vdss=30V, Rds(on)=0.25ohm) |
| IRLML6401 | HEXFET Power MOSFET |
| IRLML6402PBF | HEXFET Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRLML6402GPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRLML6402GTRPBF | 功能描述:MOSFET MOSFT P-Ch -3.7A 65mOhm 8nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLML6402GTRPBF-CUT TAPE | 制造商:IR 功能描述:Single P-Channel 20 V 1.3 W 8.0 nC Hexfet Power Mosfet Surface Mount - SOT-23 |
| IRLML6402PBF | 制造商:International Rectifier 功能描述:Bulk 制造商:International Rectifier 功能描述:MOSFETP CH20V3.7ASOT-23 制造商:International Rectifier 功能描述:MOSFET,P CH,20V,3.7A,SOT-23 制造商:International Rectifier 功能描述:MOSFET,P CH,20V,3.7A,SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-550mV; Power ;RoHS Compliant: Yes |
| IRLML6402TR | 功能描述:MOSFET P-CH 20V 3.7A SOT-23 RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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