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參數資料
| 型號： | IRLR2905ZPBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數： | 1/11頁 |
| 文件大小： | 277K |
| 代理商： | IRLR2905ZPBF |
IRLR2905ZPbF
IRLU2905ZPbF
HEXFET
Power MOSFET
V
DSS
= 55V
R
DS(on)
= 13.5m
I
D
= 42A
www.irf.com
1
AUTOMOTIVE MOSFET
PD - 95774A
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
Absolute Maximum Ratings
S
D
G
Description
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Features
D-Pak
IRLR2905Z
I-Pak
IRLU2905Z
HEXFET
is a registered trademark of International Rectifier.
Parameter
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
P
D
@T
C
= 25°C Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
A
Pulsed Drain Current
W
W/°C
V
mJ
A
mJ
°C
Parameter
Typ.
–––
–––
–––
Max.
1.38
40
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
°C/W
-55 to + 175
300 (1.6mm from case )
10 lbf in (1.1N m)
110
0.72
± 16
57
Max.
60
43
42
240
85
See Fig.12a, 12b, 15, 16
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相關代理商/技術參數 |
參數描述 |
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| IRLR2905ZTRLPBF | 功能描述:MOSFET MOSFT 55V 60A 13.5mOhm 23nC LogLvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLR2905ZTRPBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLR2908 | 制造商:International Rectifier 功能描述: |
| IRLR2908PBF | 功能描述:MOSFET 80V 1 N-CH HEXFET PWR MOSFET 28mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLR2908TRLPBF | 功能描述:MOSFET MOSFT 80V 39A 28mOhm 22nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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