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參數資料
| 型號： | IRLR3705Z |
| 廠商： | International Rectifier |
| 英文描述： | Specifically designed for Automotive applications,this HEXFET Power MOSFET |
| 中文描述： | 專為汽車應用中，這HEXFET功率MOSFET |
| 文件頁數： | 1/11頁 |
| 文件大小： | 286K |
| 代理商： | IRLR3705Z |
www.irf.com
1
HEXFET
Power MOSFET
V
DSS
= 55V
R
DS(on)
= 8.0m
I
D
= 42A
Specifically designed for Automotive applications,
this HEXFET
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
S
D
G
Description
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Features
D-Pak
IRLR3705Z
I-Pak
IRLU3705Z
AUTOMOTIVE MOSFET
PD - 96896
IRLR3705Z
IRLU3705Z
Absolute Maximum Ratings
Parameter
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
P
D
@T
C
= 25°C
Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
A
Pulsed Drain Current
W
W/°C
V
mJ
A
mJ
°C
Parameter
Typ.
–––
–––
–––
Max.
1.14
40
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
°C/W
190
110
See Fig.12a, 12b, 15, 16
130
0.88
± 16
Max.
89
63
42
360
-55 to + 175
300 (1.6mm from case )
10 lbf in (1.1N m)
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| IRLR3714PBF | HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mヘ , ID = 36A ) |
| IRLU3714PBF | HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mヘ , ID = 36A ) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRLR3705ZHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 89A 3-Pin(2+Tab) DPAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 89A 3PIN DPAK - Bulk |
| IRLR3705ZPBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 8mOhms 44nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLR3705ZTRPBF | 功能描述:MOSFET MOSFT 55V 89A 8mOhm 44nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLR3705ZTRPBF-BL | 制造商:International Rectifier 功能描述: |
| IRLR3705ZTRPBF-CUT TAPE | 制造商:IR 功能描述:Single N-Channel 55 V 130 W 44 nC Hexfet Power Mosfet Surface Mount - DPAK |
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