欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: IRLR3915
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁數: 1/11頁
文件大小: 581K
代理商: IRLR3915
Parameter
Max.
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon limited)
Continuous Drain Current, V
GS
@ 10V (See Fig.9)
Continuous Drain Current, V
GS
@ 10V (Package limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
61
43
30
240
120
0.77
± 16
200
600
A
W
W/°C
V
mJ
V
GS
E
AS
E
AS
(6 sigma)
I
AR
E
AR
T
J
T
STG
See Fig.12a, 12b, 15, 16
A
mJ
-55 to + 175
300 (1.6mm from case )
°C
IRLR3915
IRLU3915
HEXFET
Power MOSFET
Absolute Maximum Ratings
Parameter
Typ.
–––
–––
110
Max.
1.3
50
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient–––
°C/W
Thermal Resistance
V
DSS
= 55V
R
DS(on)
= 14m
I
D
= 30A
www.irf.com
1
AUTOMOTIVE MOSFET
PD - 94543
HEXFET(R) is a registered trademark of International Rectifier.
Description
Specifically designed for Automotive applications,
this HEXFET Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this product are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
S
D
G
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
D-Pak
IRLR3915
I-Pak
IRLU3915
相關PDF資料
PDF描述
IRLU3915 HEXFET Power MOSFET
IRLR4343 DIGITAL AUDIO MOSFET
IRLU4343 DIGITAL AUDIO MOSFET
IRLU4343-701 DIGITAL AUDIO MOSFET
IRLR7807ZCPBF HEXFET Power MOSFET
相關代理商/技術參數
參數描述
IRLR3915HR 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 61A 3PIN DPAK - Bulk
IRLR3915PBF 功能描述:MOSFET 55V 1 N-CH HEXFET 14mOhms 61nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLR3915TRHR 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 61A 3PIN DPAK - Tape and Reel
IRLR3915TRLHR 制造商:International Rectifier 功能描述:MOSFET, 55V, 61A, 14 MOHM, 61 NC QG, LOGIC LEVEL, D-PAK - Tape and Reel
IRLR3915TRPBF 功能描述:MOSFET MOSFT 55V 61A 14mOhm 61nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
主站蜘蛛池模板: 喀什市| 新乡市| 台安县| 响水县| 永州市| 阳朔县| 农安县| 郑州市| 沙洋县| 长岭县| 红桥区| 卢湾区| 玉溪市| 阳泉市| 濮阳县| 武清区| 双江| 青河县| 海口市| 油尖旺区| 武冈市| 库伦旗| 阿坝县| 金坛市| 鲁甸县| 榆社县| 拉孜县| 刚察县| 清丰县| 上林县| 泽库县| 定陶县| 榆中县| 抚远县| 娱乐| 湄潭县| 斗六市| 惠水县| 凤城市| 通山县| 龙井市|