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參數資料
| 型號： | IRLR8103VPBF |
| 廠商： | International Rectifier |
| 英文描述： | N-Channel Application-Specific MOSFETs |
| 中文描述： | N溝道特定應用MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大小： | 215K |
| 代理商： | IRLR8103VPBF |
DEVICE CHARACTERISTICS
12/0604
D-Pak
IRLR8103VPbF
www.irf.com
1
S
D
G
PD - 95093A
IRLR8103V
7.9 m
27 nC
12 nC
R
DS(on)
Q
G
Q
SW
Q
OSS
29nC
Absolute Maximum Ratings
Symbol
V
DS
V
GS
Units
Continuous Drain or Source Current TC = 25°C
(V
GS
> 10V)
Pulsed Drain Current
TC= 90°C
I
DM
TC = 25°C
TC = 90°C
T
J
, T
STG
I
S
I
SM
°C
Thermal Resistance
Symbol
R
θ
JA
R
θ
JC
Typ.
–––
–––
Max.
50
1.09
Units
°C/W
A
V
A
I
D
P
D
W
IRLR8103V
30
±20
91
63
363
91
363
115
60
-55 to 150
Power Dissipation
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Parameter
Drain-Source Voltage
Gate-Source Voltage
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Minimizes Parallel MOSFETs for high current
applications
100% R
Tested
Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented balance
of on-resistance and gate charge. The reduced conduction
and switching losses make it ideal for high efficiency DC-
DC converters that power the latest generation of
microprocessors.
The IRLR8103V has been optimized for all parameters
that are critical in synchronous buck converters including
R
, gate charge and Cdv/dt-induced turn-on immunity.
The IRLR8103V offers an extremely low combination of
Q
& R
for reduced losses in both control and
synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical PCB
mount application.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRLR8103VTR | 制造商:International Rectifier 功能描述:MOSFET, 30V, 89A, 9 mOhm, 27 nC Qg, Logic Level, D-Pak |
| IRLR8103VTRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 91A 3-Pin(2+Tab) DPAK T/R |
| IRLR8103VTRL | 功能描述:MOSFET N-CH 30V 91A DPAK RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRLR8103VTRLHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 91A 3-Pin(2+Tab) DPAK T/R |
| IRLR8103VTRLPBF | 功能描述:MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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