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參數(shù)資料
| 型號： | IRLRU120N |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 100V的，的Rds（on）\u003d 0.185ohm，身份證\u003d 10A條） |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 173K |
| 代理商： | IRLRU120N |
IRLR/U120N
HEXFET
Power MOSFET
S
D
G
V
DSS
= 100V
R
DS(on)
= 0.185
I
D
= 10A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
5/11/98
Parameter
Max.
10
7.0
35
48
0.32
± 16
85
6.0
4.8
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Parameter
Typ.
–––
–––
–––
Max.
3.1
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
www.irf.com
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
°C/W
Thermal Resistance
D-PAK
TO-252AA
I-PAK
TO-251AA
l
Surface Mount (IRLR120N)
l
Straight Lead (IRLU120N)
l
Advanced Process Technology
l
Fast Switching
l
Fully Avalanche Rated
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
PD - 91541B
1
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PDF描述 |
|---|---|
| IRLU120N | Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A) |
| IRLR120N | HEXFET Power MOSFET(HEXFET 功率MOS場效應(yīng)管) |
| IRLRU3410 | Logic Level Gate Drive / Fully Avalanche Rated |
| IRLU110 | HEXFET Power MOSFET(HEXFET 功率MOS場效應(yīng)管) |
| IRLR110 | POWER MOSFET |
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| IRLRU2905 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
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