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參數資料
| 型號： | IRLU024N |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數： | 1/10頁 |
| 文件大小： | 162K |
| 代理商： | IRLU024N |
HEXFET
Power MOSFET
S
D
G
Parameter
Typ.
–––
–––
–––
Max.
3.3
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
°C/W
Thermal Resistance
V
DSS
= 55V
R
DS(on)
= 0.065
I
D
= 17A
Description
Fifth Generation HEXFET
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the lowest possible on-
resistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient device for use in
a wide variety of applications.
2/10/00
www.irf.com
1
l
Logic-Level Gate Drive
l
Surface Mount (IRLR024N)
l
Straight Lead (IRLU024N)
l
Advanced Process Technology
l
Fast Switching
l
Fully Avalanche Rated
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
Absolute Maximum Ratings
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
Parameter
Max.
17
12
72
45
0.3
± 16
68
11
4.5
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
PD- 91363E
IRLR024N
IRLU024N
D-Pak I-Pak
IRLR024N IRLU024N
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRLU024NHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 17A 3-Pin(3+Tab) IPAK |
| IRLU024NPBF | 功能描述:MOSFET MOSFT 55V 17A 65mOhm 10nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLU024PBF | 功能描述:MOSFET N-Chan 60V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLU024Z | 制造商:IRF 制造商全稱:International Rectifier 功能描述:AUTOMOTIVE MOSFET |
| IRLU024ZHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 16A 3PIN IPAK - Rail/Tube |
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