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參數資料
| 型號： | IRS2112-1PBF |
| 廠商： | International Rectifier |
| 英文描述： | HIGH AND LOW SIDE DRIVER |
| 中文描述： | 高端和低端驅動 |
| 文件頁數： | 1/19頁 |
| 文件大小： | 567K |
| 代理商： | IRS2112-1PBF |
Features
Floating channel designed for bootstrap operation
Fully operational to +600 V
Tolerant to negative transient voltage, dV/dt
immune
Gate drive supply range from 10 V to 20 V
Undervoltage lockout for both channels
3.3 V logic compatible
Separate logic supply range from 3.3 V to 20 V
Logic and power ground +/- 5 V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
RoHS compliant
Product Summary
V
OFFSET
600 V max.
I
O
+/-
200 mA / 440 mA
V
OUT
10 V - 20 V
t
on/off
(typ.)
135 ns & 105 ns
Delay Matching
30 ns
www.irf.com
1
Data Sheet No. PD60251
IRS2112(
-
1,
-
2,S)PbF
Description
The IRS2112 is a high voltage, high speed power
M
OSFET and IGBT driver with
independent high- and
low-side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rug-
gedized monolithic construction. Logic inputs are com-
patible with standard CMOS or LSTTL outputs, down
to 3.3 V logic. The output drivers feature a high pulse
current buffer stage designed for minimum driver
cross-conduction. Propagation delays are matched
to simplify use in high frequency applications. The
floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration
which operates up to 600 V.
(Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connections only. Please
refer to our Application Notes and DesignTips for proper circuit board layout.
Typical Connection
HIN
up to 600 V
TO
LOAD
V
DD
HIN
V
B
V
S
HO
LO
COM
LIN
V
SS
SD
V
CC
LIN
V
DD
SD
V
SS
V
CC
Packages
16-Lead SOIC
IRS2112S
14-Lead PDIP
(w/o lead 4)
IRS2112-1
14-Lead PDIP
IRS2112
16-Lead PDIP
(w/o leads 4 & 5)
IRS2112-2
HIGH AND LOW SIDE DRIVER
相關PDF資料 |
PDF描述 |
|---|---|
| IRS2112-2PBF | HIGH AND LOW SIDE DRIVER |
| IRS2112PBF | HIGH AND LOW SIDE DRIVER |
| IRS2112SPBF | HIGH AND LOW SIDE DRIVER |
| IRS2112STRPBF | HIGH AND LOW SIDE DRIVER |
| IRS2181 | HIGH AND LOW SIDE DRIVER |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRS2112-2PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HIGH AND LOW SIDE DRIVER |
| IRS2112PBF | 功能描述:功率驅動器IC Hi&Lw Sd Drvr ShutDwn Inpt RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS2112PBF | 制造商:International Rectifier 功能描述:MOSFET Driver IC |
| IRS2112SPbF | 功能描述:功率驅動器IC HI LO SIDE DRVR 600V 200mA 135ns RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS2112STRPBF | 功能描述:功率驅動器IC Hi&Lw Sd Drvr ShutDwn Inpt RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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