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參數資料
| 型號： | IRS2117PBF |
| 廠商： | International Rectifier |
| 英文描述： | SINGLE CHANNEL DRIVER |
| 中文描述： | 單信道驅動器 |
| 文件頁數： | 1/19頁 |
| 文件大小： | 371K |
| 代理商： | IRS2117PBF |
Features
Floating channel designed for bootstrap operation
Fully operational to +600 V
Tolerant to negative transient voltage, dV/dt
immune
Gate drive supply range from 10 V to 20V
Undervoltage lockout
CMOS Schmitt-triggered inputs with pull-down
Output in phase with input (IRS2117) or out of
phase with input (IRS2118)
RoHS compliant
SINGLE CHANNEL DRIVER
Product Summary
V
OFFSET
600 V max.
I
O
+/-
200 mA / 420 mA
V
OUT
10 V - 20 V
t
on/off
(typ.)
125 ns & 105 ns
Packages
Typical Connection
8-Lead PDIP
IRS2117/IRS2118
8-Lead SOIC
IRS2117S/IRS2118S
IRS2117
IRS2118
IRS2117/IRS2118(S)PbF
www.irf.com
1
(Refer to Lead Assignments for correct pin configuration). These
diagrams show electrical connections only. Please refer to our
Application Notes and DesignTips for proper circuit board layout.
Description
The IRS2117/IRS2118 are a high voltage, high speed
power MOSFET and IGBT driver. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized
monolithic construction. The logic input is compatible
with standard CMOS outputs. The output driver fea-
tures a high pulse current buffer stage designed for
minimum cross-conduction. The floating channel can
be used to drive an N-channel power MOSFET or IGBT
in the high-side or low-side configuration which oper-
ates up to 600 V.
Data Sheet No. PD60227
V
CC
IN
V
B
HO
V
S
COM
up to 600 V
V
CC
IN
LTO
V
CC
IN
V
B
HO
V
S
COM
up to 600 V
V
CC
IN
LTO
相關PDF資料 |
PDF描述 |
|---|---|
| IRS2118PbF | Asynchronous SRAM; Organization (word): 512K; Organization (bit): x 8; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (36); Status:   Remarks:   |
| IRS2118SPbF | Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (44); Status:   Remarks:   |
| IRS2117SPbF | SINGLE CHANNEL DRIVER |
| IRS212PBF | Asynchronous SRAM; Organization (word): 512K; Organization (bit): x 8; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: SOJ (36); Status:   Remarks:   |
| IRS21271PbF | Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (44); Status:   Remarks:   |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRS2117PBF | 制造商:International Rectifier 功能描述:MOSFET Driver IC |
| IRS2117SPbF | 功能描述:功率驅動器IC 1 NONINVERTING INPUT VTG THRESHOLD RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS2117SPBF | 制造商:International Rectifier 功能描述:MOSFET Driver IC |
| IRS2117STRPBF | 功能描述:功率驅動器IC Sngl Hi Sd Drvr NonInvrt Inpt RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS2118 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:SINGLE CHANNEL DRIVER |
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