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參數資料
| 型號： | IRS21853SPBF |
| 廠商： | International Rectifier |
| 英文描述： | Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: TSOPII (44); Status:   Remarks:   |
| 中文描述： | 雙通道高側驅動IC |
| 文件頁數： | 1/17頁 |
| 文件大小： | 188K |
| 代理商： | IRS21853SPBF |
Data Sheet No. PD60294
IRS21853SPBF
DUAL HIGH SIDE DRIVER IC
Product Summary
Features
Gate drive supply range from 10 V to 20 V
Under voltage lockout for V
CC
& V
BS1,2
5 V input logic compatible
Tolerant to negative transient voltage
Matched propagation delays for all channels
RoHS compliant
Descriptions
configuration, which operates up to 600 V.
V
OFFSET
600 V max
V
OUT
10 V to 20 V
t
on
/t
off
(typ) 170 ns/170 ns
I
o+/-
2 A/2 A
Delay Matching 40 ns
Package
16-Lead SOIC (narrow body
)
Typical Connection Diagram
+VDC1
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC
COM
HIN1
HIN2
VB1
HO1
VS1
VB2
HO2
VS2
SON16
IRS21853
+VDC2
The IRS21853 is a high voltage, high speed power
MOSFET and IGBT dual high-side driver with propagation
delay matched output channels. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized
monolithic construction. The floating logic input is
compatible with standard CMOS or LSTTL output, down to
3.3 V logic and can be operated up to 600 V above the
ground. The output driver features a high pulse current
buffer stage designed for minimum driver cross-
conduction. The floating channel can be used to drive an
N-channel power MOSFET or IGBT in the high-side
相關PDF資料 |
PDF描述 |
|---|---|
| IRS21952SPBF | HIGH SIDE & DUAL LOW SIDE DRIVER IC |
| IRS21952STRPBF | Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: TSOPII (44); Status:   Remarks:   |
| IRS21953SPBF | HIGH SIDE & DUAL LOW SIDE DRIVER IC |
| IRS2308 | HALF-BRIDGE DRIVER |
| IRS2308PbF | HALF-BRIDGE DRIVER |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRS21853STRPBF | 功能描述:功率驅動器IC Dual Hi Sd Drvr RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS21856SPBF | 功能描述:功率驅動器IC High Dual Low Side 600V 4.5V 160ns RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS21856STRPBF | 功能描述:功率驅動器IC Ramp Slope Cntrl Driver Hi Volt RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS21858SPBF | 功能描述:功率驅動器IC Hig Dual Side DRVR 600V 290mA 160ns RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS21858STRPBF | 功能描述:功率驅動器IC Hi&Lw Sd Dual Drvr IC RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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