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參數資料
| 型號： | IRS2308S |
| 廠商： | International Rectifier |
| 英文描述： | Fast SRAM > Network SRAM; Organization (word): 512K; Organization (bit): x 36; Memory capacity (bit): 18M; Supply voltage (V): 3.135 to 3.465; Operating temperature (°C): 0 to 70; Package: TQFP (100) |
| 中文描述： | 半橋驅動器 |
| 文件頁數： | 1/21頁 |
| 文件大小： | 332K |
| 代理商： | IRS2308S |
V
CC
HIN
V
B
HO
V
S
LO
COM
LIN
LIN
HIN
up to 600 V
TO
LOAD
V
CC
Typical Connection
HALF-BRIDGE DRIVER
Features
Floating channel designed for bootstrap operation
Fully operational to +600 V
Tolerant to negative transient voltage, dV/dt
immune
Gate drive supply range from 10 V to 20 V
Undervoltage lockout for both channels
3.3 V, 5 V, and 15 V input logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
Outputs in phase with inputs
Logic and power ground +/- 5 V offset.
Internal 540 ns deadtime
Lower di/dt gate driver for better
noise immunity
RoHS compliant
Data Sheet No.PD60266
IRS2308
(S)PbF
www.irf.com
1
(Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
Description
The IRS2308/IRS23084 are high volt-
age, high speed power MOSFET and
IGBT drivers with dependent high
-side
and
low
-
side referenced output channels.
Proprietary HVIC and latch immune
CMOS technologies enable ruggedized
monolithic construction. The logic input
is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high
pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used
to drive an N-channel power MOSFET or IGBT in the high
-
side configuration which operates up to 600 V.
Packages
8-Lead SOIC
IRS2308S
8-Lead PDIP
IRS2308
Part
Input
logic
Cross-
conduction
prevention
logic
Deadtime
(ns)
Ground Pins
to(ns)
2106
21064
2108
21084
2109
21094
2304
2308
COM
V
SS
/COM
COM
V
SS
/COM
COM
V
SS
/COM
COM
COM
HIN/LIN
no
none
220/200
Internal 540
HIN/LIN
yes
Programmable 540 - 5000
Internal 540
Programmable 540 - 5000
Internal 100
Internal 540
220/200
IN/SD
yes
750/200
Feature Comparison
HIN/LIN
HIN/LIN
yes
yes
160/140
220/200
相關PDF資料 |
PDF描述 |
|---|---|
| IRS2308SPbF | Fast SRAM > Late Write Synchronous SRAM; Organization (word): 1M; Organization (bit): x 36; Memory capacity (bit): 32M; Supply voltage (V): 300; Operating temperature (°C): 1.5; Package: BGA (119) |
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| IRS23364D | HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRS2308SPBF | 功能描述:功率驅動器IC 3-Phase Bridge DRVR 600V 600mA 540ns RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS2308STRPBF | 功能描述:功率驅動器IC Half Bridge Drvr Hi Volt & Hi Speed RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS2330DJPBF | 功能描述:功率驅動器IC 3-Ph Bridge Driver 600V 200mA 500ns RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS2330DJTRPBF | 功能描述:功率驅動器IC 600V 3Phs Drvr IC w/ Intgr BSF & OperAmpl RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS2330DSPBF | 功能描述:功率驅動器IC 3-Ph Bridge Driver 600V 200mA 500ns RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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