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參數資料
| 型號： | IRZ24NS |
| 英文描述： | (159.21 k) |
| 中文描述： | （159.21十一） |
| 文件頁數： | 1/10頁 |
| 文件大小： | 159K |
| 代理商： | IRZ24NS |
IRFZ24NS/L
HEXFET
Power MOSFET
PD - 9.1355B
l
Advanced Process Technology
l
Surface Mount (IRFZ24NS)
l
Low-profile through-hole (IRFZ24NL)
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Parameter
Typ.
–––
–––
Max.
3.3
40
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Thermal Resistance
°C/W
Parameter
Max.
17
12
68
3.8
45
0.30
± 20
71
10
4.5
6.8
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ24NL) is available for low-
profile applications.
Description
V
DSS
= 55V
R
DS(on)
= 0.07
I
D
= 17A
D2
TO-262
S
D
G
9/22/97
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