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| 型號(hào)： | IS41C16100S-45K |
| 英文描述： | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 100萬(wàn)× 16（16兆）動(dòng)態(tài)與江戶頁(yè)面模式內(nèi)存 |
| 文件頁(yè)數(shù)： | 5/20頁(yè) |
| 文件大小： | 533K |
| 代理商： | IS41C16100S-45K |
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IS41C16100S
IS41LV16100S
Integrated Circuit Solution Inc.
5
DR004-0B
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
T
Voltage on Any Pin Relative to GND
5V
–1.0 to +7.0
V
3.3V
–0.5 to +4.6
V
CC
Supply Voltage
5V
–1.0 to +7.0
V
3.3V
–0.5 to +4.6
I
OUT
Output Current
50
mA
P
D
Power Dissipation
1
W
T
A
Commercial Operation Temperature
0 to +70
°C
Industrial Operationg Temperature
–40 to +85
°C
T
STG
Storage Temperature
–55 to +125
°C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltages are referenced to GND.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
5V
4.5
5.0
5.5
V
3.3V
5V
3.3V
5V
3.3V
3.0
3.3
3.6
V
IH
Input High Voltage
2.4
—
V
CC
+ 1.0
V
2.0
—
V
CC
+ 0.3
V
IL
Input Low Voltage
–1.0
—
0.8
V
–0.3
—
0.8
T
A
Commercial Ambient Temperature
0
—
70
°C
Industrial Ambient Temperature
–40
—
85
°C
CAPACITANCE
(1,2)
Symbol
Parameter
Max.
Unit
C
IN
1
Input Capacitance: A0-A9
Input Capacitance:
RAS
,
UCAS
,
LCAS
,
WE
,
OE
5
pF
C
IN
2
7
pF
C
IO
Data Input/Output Capacitance: I/O0-I/O15
7
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS41C16100S-45KI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C16100S-45T | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C16100S-45TI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C16100S-50K | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100S | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS41C16100S-45KI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C16100S-45T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C16100S-45TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C16100S-50K | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C16100S-50KI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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